Nanostructured Vo2 Film with High Transparency and Enhanced Switching Ratio in Thz Range

Qiwu Shi,Wanxia Huang,Tiecheng Lu,Yaxin Zhang,Fang Yue,Shen Qiao,Yang Xiao
DOI: https://doi.org/10.1063/1.4863408
IF: 4
2014-01-01
Applied Physics Letters
Abstract:We investigated the terahertz (THz) transmission characteristics of semiconductor VO2 film and its THz suppression behavior after the phase transition. The VO2 films were deposited by the sol-gel method, and an in situ growth with surface nanocrystallization occurring in the films with increasing thickness was presented. Morphology-induced percolation leads to high THz transparency in the semiconductor VO2 film, and the more compact nanostructure could account for the enhanced THz switching ratio in the metallic film. These results may offer insights into the artificial design of VO2 films for THz device applications.
What problem does this paper attempt to address?