Abstract:Studies on quantum dots (QDs) provide great opportunities in single photon detection as well as single circular polarized photon emission, which are the key technology for future quantum information processing. For single photon detection, the quantum-dot-resonant-tunneling-diode (QD-RTD) is evaluated as one of the most promising scheme but still suffering from the ultralow working temperature (～5 K) and lack the capability to discriminate photon numbers. Here we demonstrate a photon-number-resolving detector based on quantum dot coupled resonant tunneling diodes (QD-cRTD). Individual QDs coupled closely with adjacent quantum well (QW) of resonant tunneling diode operate as photon-gated switches which turn on (off) the RTD tunneling current when they trap photon-generated holes (recombine with injected electrons). With proper decision regions defined, 1-photon and 2-photon states are resolved in 4.2 K with excellent propabilities of accuracy of 90% and 98% respectively. Further, by identifying step-like photon responses, the photon-number-resolving capability is sustained to 77 K, making the detector a promising candidate for advanced quantum information applications where photon-number-states should be accurately distinguished. On the other hand, we firstly performed the magneto-optical studies on single InGaAs/GaAs self-assembled QDs. We observed the exciton Zeeman splitting and diamagnetic shift of a single QD under magnetic field, and the exciton g factor and diamagnetic coefficient was extracted by fitting the magnetic field dependent PL energies. By comparing with theories, we discussed on the effect of QD size, shape and composition on these two parameters. Based on these work, we investigated the single QD exciton-cavity mode coupling effect under external magnetic field. By first time we observed the interaction of Zeeman splitted exciton spin states with the cavity mode and realized the selective enhancement of the SE rate of the exciton state with specific spin configuration by means of magnetic manipulation of Purcell effect. In this sense, single QD emission with higher circular polarization degree under non-polarized excitation was realized. Our results have high potential to open up a way to novel quantum light sources and quantum information processing applications based on cavity quantum electrodynamics effects.

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Optical Study of Spatially Ordered Inas Quantum Dots in Disk-Like Structures

InAs Quantum Dots for Quantum Information Processing

Single- and Twin-Photons Emitted from Fiber-Coupled Quantum Dots in a Distributed Bragg Reflector Cavity

Single InAs Quantum Dot Grown at the Junction of Branched Gold-Free GaAs Nanowire.

Single Semiconductor Quantum Dots in Microcavities: Bright sources of indistinguishable Photons

Square-Lattice Photonic Crystal Microcavities for Coupling to Single Inas Quantum Dots

Combined atomic force microscopy and photoluminescence imaging to select single InAs/GaAs quantum dots for quantum photonic devices

Wafer-Scale Epitaxial Low Density InAs/GaAs Quantum Dot for Single Photon Emitter in Three-Inch Substrate

Single Photon Detection and Circular Polarized Emission Manipulated with Individual Quantum Dot

Self-assembled InAs/GaAs single quantum dots with suppressed InGaAs wetting layer states and low excitonic fine structure splitting for quantum memory

Optical And Electrical Investigation Of Low Dimensional Self-Assembled Inas Quantum Dot Field Effect Transistors

Probing the Dark-Exciton States of a Single Quantum Dot Using Photocurrent Spectroscopy in a Magnetic Field

Nanoscale optical positioning of single quantum dots for bright and pure single-photon emission

Widely Tunable Intersubband Energy Spacing of Self-Assembled Inas/Gaas Quantum Dots Due to Interface Intermixing

Inas Based Quantum Dots for Quantum Information Processing: from Fundamental Physics to 'plug and Play' Devices

Monolithic Polarizing Circular Dielectric Gratings on Bulk Substrates for Improved Photon Collection from InAs Quantum Dots

Purcell-enhanced single-photon emission from InAs/GaAs quantum dots coupled to broadband cylindrical nanocavities

Highly-reduced Fine-structure splitting in InAs/InP quantum dots offering efficient on-demand 1.55 $μ$m entangled photon emitter

Charging of a Single InAs QD with Electrically-Injected Holes using a Lateral Electric Field

Single-photon Interference Based on a Single InAs Quantum Dot