Abstract:In the pursuit of room temperature quantum hardware, our study introduces a gate voltage tunable quantum wire within a tri-gated n-type junctionless MOSFET. The application of gate voltage alters the parabolic potential well of the tri-gated junctionless MOSFET, enabling modification of the nanowire's potential well profile. In the presence of light, photogenerated electrons accumulate at the center of the junctionless nanowire, aligning with the modified potential well profile influenced by gate bias. These carriers at the center are far from interfaces and experience less interfacial noise. Therefore, such clean photo-doping shows clear, repeatable peaks in current for specific gate biases compared to the dark condition, considering different operating drain-to-source voltages at room temperature. We propose that photodoping-induced subband occupation of gate tunable potential well of the nanowire is the underlying phenomenon responsible for this kind of observation. This study reveals experimental findings demonstrating gate-induced switching from semi-classical to the quantum domain, followed by the optical occupancy of electronic sub-bands at room temperature. We developed a compact model based on the Nonequilibrium Green's function formalism to understand this phenomenon in our illuminated device better. This work reveals the survival of the quantum confinement effect at room temperature in such semi-classical transport.

Current-voltage Spectroscopy of Dopant-Induced Quantum-Dots in Heavily N-Doped Junctionless Nanowire Transistors

Electron Transport Behaviors Through Donor-Induced Quantum Dot Array In Heavily N-Doped Junctionless Nanowire Transistors

Low-Temperature Study of Array of Dopant Atoms on Transport Behaviors in Silicon Junctionless Nanowire Transistor

Temperature Dependence of Electronic Behaviors in N-Type Multiple-Channel Junctionless Transistors

Low-temperature Electron Mobility in Heavily N-Doped Junctionless Nanowire Transistor

Transport Through Dopant Atom Arrays in Silicon Junctionless Nanowire Transistor

Investigation of Mobility Enhancement of Junctionless Nanowire Transistor at Low Temperatures

Electric-field-dependent Charge Delocalization from Dopant Atoms in Silicon Junctionless Nanowire Transistor

Geometry and Temperature Effects on the Threshold Voltage Characteristics of Silicon Nanowire MOS Transistors

Room-temperature single-electron tunneling in highly-doped silicon-on-insulator nanoscale field-effect transistors

Gate-driven transition temperatures of electron hopping behaviors in Hubbard bands formed by dopant-induced QD array in silicon nanowire

Effects of Quantized Energy Levels of QDs Confined in Asymmetric Barriers Within Silicon Nanowire Transistor

Investigations of Junctionless Nanowire Transistors with Non-Uniform Channel

Electronic Transport Properties of Silicon Junctionless Nanowire Transistors Fabricated by Femtosecond Laser Direct Writing

Observation of room temperature gate tunable quantum confinement effect in photodoped junctionless MOSFET

Kondo Resonance Assisted Thermoelectric Transport Through Strongly Correlated Quantum Dots

Quantum transport in an ambipolar InSb nanowire quantum dot device

Superconductivity-enhanced bias spectroscopy in carbon nanotube quantum dots

Detecting THz current fluctuations in a quantum point contact using a nanowire quantum dot

Electronic Tunnelling in Superconductor/Quantum-Dot Josephson Junction Side-Coupled to Majorana Nanowire

Suppression of Tunneling Leakage Current in Junctionless Nanowire Transistors