Abstract:In recent years, quasi-1D semiconductor nanowires have attracted significant research interest in the field of optoelectronic devices. Indium arsenide (InAs) nanowire, a III–V compound semiconductor structure with a narrow band gap, shows high electron mobility and high absorption from the visible to the mid-wave infrared (MWIR), holding promise for room-temperature high-performance infrared photodetectors. Therefore, the material growth, device preparation and performance characteristics have attracted increasing attention, enabling high-sensitivity InAs nanowire photodetector from the visible to the MWIR at room temperature. This review starts by discussing the growth process of the low-dimensional structure and elementary properties of the material, such as the crystalline phase, mobility, morphology, surface states and metal contacts. Then, three solutions, including the visible-light-assisted infrared photodetection technology, vertical nanowire-array technology and band engineering by the growth of InAsSb nanowires with increasing Sb components, are elaborated to obtain longer cut-off wavelength MWIR photodetectors based on single InAs nanowire and its heterojunction structure. Finally, the potential and challenges of the state-of-the-art optoelectronic technologies for InAs nanowire MWIR photodetectors are summarized and compared, and preliminary suggestions for the technical development route and prospects are presented. This review mainly delineates the research progress of material growth, device fabrication and performance characterization of InAs nanowire MWIR photodetectors, providing a reference for the development of the next-generation high-performance photodetectors over a wide spectrum range.

Detecting THz current fluctuations in a quantum point contact using a nanowire quantum dot

Detection of Charge States in Nanowire Quantum Dots Using a Quantum Point Contact

Self-aligned charge read-out for InAs nanowire quantum dots

Unveiling the detection dynamics of semiconductor nanowire photodetectors by terahertz near-field nanoscopy

Detection of charge states of an InAs nanowire triple quantum dot with an integrated nanowire charge sensor

Semiconductor Nanowire Field-Effect Transistors as Sensitive Detectors in the Far-Infrared

Imaging a 1-electron InAs quantum dot in an InAs/InP nanowire

Time-Resolved Detection of Individual Electrons in a Quantum Dot

Highly symmetric and tunable tunnel couplings in InAs/InP nanowire heterostructure quantum dots

Room-temperature terahertz detectors based on semiconductor nanowire field-effect transistors

Optical Detection of Plasmonic and Interband Excitations in 1-Nm-wide Indium Atomic Wires

Detection of non-Gaussian Fluctuations in a Quantum Point Contact

A Charge Sensor Integration to Tunable Double Quantum Dots on Two Neighboring InAs Nanowires.

Recent Progress on Infrared Photodetectors Based on InAs and InAsSb Nanowires

Rapid detection of coherent tunneling in an InAs nanowire quantum dot through dispersive gate sensing

Quantum Dot Source-Drain Transport Response at Microwave Frequencies

Quantized conductance and its correlation to the supercurrent in a nanowire connected to superconductors.

Supercurrent Through InAs Nanowires with Highly Transparent Superconducting Contacts

Detection of Single-Electron Charging in an Individual InAs Quantum Dot by Noncontact Atomic-Force Microscopy.

Probing confined phonon modes by transport through a nanowire double quantum dot

Measuring Temperature Gradients over Nanometer Length Scales