Abstract:Exploration of novel resistive switching materials attracts attention to replace conventional Si-based transistors and to achieve neuromorphic computing that can surpass the limit of the current Von-Neumann computing for the time of Internet of Things (IoT). Materials priorly used to serve in batteries have demonstrated metal-insulator transitions upon an electrical biasing due to resulting compositional change. This property is desirable for future resistive switching devices. Amorphous lithium lanthanum titanate (a-LLTO) was originally developed as a solid-state electrolyte with relatively high lithium ionic conductivity and low electronic conductivity among oxide-type solid electrolytes. However, it has been suggested that electric conductivity of a-LLTO changes depending on oxygen content. In this work, the investigation of switching behavior of a-LLTO was conducted by employing a range of voltage sweep techniques, ultimately establishing a stable and optimal operating condition within the voltage window of -3.5 V to 3.5 V. This voltage range effectively balances the desirable trait of a substantial resistance change by three orders of magnitude with the imperative avoidance of LLTO decomposition. This switching behavior is also confirmed at nanodevice of Ni/LLTO/Ni through in-situ biasing inside focused-ion beam/scanning electron microscope (FIB-SEM). Experiment and computation with different LLTO composition shows that LLTO has two distinct conductivity states due to Ti reduction. The distribution of these two states is discussed using simplified binary model, implying the conductive filament growth during low resistance state. Consequently, our study deepens understanding of LLTO electronic properties and encourages the interdisciplinary application of battery materials for resistive switching devices.

The Evolution of Conducting Filaments in Forming-Free Resistive Switching Pt/Taox/Pt Structures

Progress in the Characterizations and Understanding of Conducting Filaments in Resistive Switching Devices

Resistive Switching Performance Improvement via Modulating Nanoscale Conductive Filament, Involving the Application of Two-Dimensional Layered Materials

Compliance Current Induced Non-Reversible Transition from Unipolar to Bipolar Resistive Switching in A Cu/Taox/Pt Structure

Evolution of the conductive filament system in HfO2-based memristors observed by direct atomic-scale imaging

Evolution of Resistive Switching Polarity in Au/Ar + Bombarded SrTi 0.993 Nb 0.007 O 3 /in Sandwiches

Parametric study of filament and gap models of resistive switching in TaO$_x$-based devices

The Resistive Switching in TiO2 Films Studied by Conductive Atomic Force Microscopy and Kelvin Probe Force Microscopy

Characteristics of Different Types of Filaments in Resistive Switching Memories Investigated by Complex Impedance Spectroscopy

Metallic filamentary conduction in valence change-based resistive switching devices: the case of TaOx thin film with x∼ 1

Thickness Effect on the Stability of Unipolar Resistance Switching in Tin Ferrite Thin Films

Elucidating Dynamic Conductive State Changes in Amorphous Lithium Lanthanum Titanate for Resistive Switching Devices

Resistive Switching Conducting Filament Electroformation with an Electrothermal Phase Field Method

Atomic-scale observations of electrical and mechanical manipulation of topological polar flux closure

Electric Field-Dependent Evolution Dynamics of Conductive Filaments in 2D Material-Based Planar Memristors

Formation Process of Conducting Filament in Planar Organic Resistive Memory

Nanoscale observations of resistive switching high and low conductivity states on TiN/HfO2/Pt structures.

Nanosized Conducting Filaments Formed by Atomic-Scale Defects in Redox-Based Resistive Switching Memories

Magnetoresistance of conductive filaments in resistive switching Co/HfO<inf>2</inf>/Pt structures

Observing Resistive Switching Behaviors in Single Ta2O5 Nanotube-Based Memristive Devices

Dynamic Processes of Resistive Switching in Metallic Filament-Based Organic Memory Devices