Carrier Scattering in Graphene Nanoribbon Field-Effect Transistors

Yijian Ouyang,Xinran Wang,Hongjie Dai,Jing Guo
DOI: https://doi.org/10.1063/1.2949749
IF: 4
2008-01-01
Applied Physics Letters
Abstract:The elastic scattering mean free path (mfp) in a graphene nanoribbon (GNR) is characterized to be short. In the absence of other scattering mechanisms, elastic scattering has a large effect on the source-drain current of a GNR field-effect transistor due to its quasi-one-dimensional channel. In the presence of optical phonon scattering, the effect of elastic scattering is reduced. The coupling of inelastic, short-mfp optical phonon scattering to elastic scattering results in an increase rather than a decrease of the source-drain current. Improving the GNR edge quality promises significant on-current improvement.
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