Electron-phonon scattering in two-dimensional Dirac-source transistors

Shuaishuai Yuan and Hong Guo
DOI: https://doi.org/10.1103/physrevapplied.22.024065
IF: 4.6
2024-08-27
Physical Review Applied
Abstract:Electron-phonon ( e -ph) scattering is a key effect in quantum transport and electronic device physics which is, however, often neglected in atomistic device simulation due to its impractical computational burden. Here we investigate e -ph effects in two-dimensional (2D) FETs, where the injecting source is graphene that inject "Dirac" electrons into the FET channel. Such a Dirac-source FET was experimentally known to have excellent transfer characteristics for its lower off -state current due to the electronic structure of the graphene. By using an approximate but computationally efficient technique (the Zacharias-Giustino method) to capture e -ph scattering, we quantitatively analyze to what extent e -ph scattering affects the operation of Dirac source, as a function of temperature. Our nonequilibrium Green's function density-functional-theory analysis microscopically reveal the e -ph scattering and we make a comprehensive evaluation of it across real, momentum, and energy spaces, covering both the tunneling and thermionic emission regions. The findings suggest that e -ph scattering does not significantly impact the overall performance of the Dirac-source FETs. For the graphene- WSe2 device, the e -ph effects amount to somewhat increase the off -state current, which is not significant as to alter the subthreshold property of the transistor. Other factors, such as gate efficiency—determined by the body factor—exhibit a more pronounced influence on device performance for this system. https://doi.org/10.1103/PhysRevApplied.22.024065 © 2024 American Physical Society
physics, applied
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