Abstract:High quality, ultrathin, superconducting films are required for advanced devices such as hot-electron bolometers, superconducting nanowire single photon detectors, and quantum applications. Using Hybrid Physical-Chemical Vapor Deposition (HPCVD), we show that MgB2 films as thin as 4 nm can be fabricated on the carbon terminated 6H-SiC (0001) surface with a superconducting transition temperature above 33K and a rms roughness of 0.7 nm. Remarkably, the film quality is a function of the SiC surface termination, with the C-terminated surface preferred to the Si-terminated surface. To understand the MgB2 thin film/ SiC substrate interactions giving rise to this difference, we characterized the interfacial structures using Rutherford backscattering spectroscopy/channeling, electron energy loss spectroscopy, and x-ray photoemission spectroscopy. The MgB2/SiC interface structure is complex and different for the two terminations. Both terminations incorporate substantial unintentional oxide layers influencing MgB2 growth and morphology, but with different extent, intermixing and interface chemistry. In this paper, we report measurements of transport, resistivity, and critical superconducting temperature of MgB2/SiC that are different for the two terminations, and link interfacial structure variations to observed differences. The result shows that the C face of SiC is a preferred substrate for the deposition of ultrathin superconducting MgB2 films.

Interface Structures in MgB2 Thin Films on (0001) SiC

Characterization of Cubic Phase MgZnO/Si(100) Interfaces

Ultra-thin Epitaxial MgB2 on SiC: Substrate Surface Polarity Dependent Properties

Atomic-scale structure and chemistry of ceramic/metal interfaces—I. Atomic structure of {222} MgO/Cu (Ag) interfaces

Applications of Cubic MgZnO Thin Films in Metal–Insulator–Silicon Structures

First-principles study on the electronic structure, bonding, stability of Mg/6H-SiC interfaces

Atomic-scale mechanism of enhanced electron-phonon coupling at the interface of MgB$_2$ thin film

Two-Dimensional Electron or Hole Gas at Zno/6h-Sic Interface

Atomic-Scale Mechanism of Enhanced Electron-Phonon Coupling at the Interface of MgB2 Thin Films

Theoretical investigations of a highly mismatched interface: the case of SiC/Si(001)

First-principles calculation of the interface stability of 3C-SiC(111)/Mg(0001)

Atomic-resolution study on the interface structure and strain state reversion of the Bi2Sr2CuO6+δ/MgO heterostructure

Structure and Stability of Partial Dislocation Complexes in 3C-SiC by Molecular Dynamics Simulations

Electronic Structures of Β-Si3n4(0001)/si(111) Interfaces: Perfect Bonding and Dangling Bond Effects

Interface Structures and Periodic Film Distortions Induced by Substrate-Surface Steps in Gd-doped Ceria Thin-Film Growth

Ab initio Study of Misfit Dislocations at the SiC/Si(001) Interface

Interface Structure of Graphene on SiC(000-1)

A novel intrinsic interface state controlled by atomic stacking sequence at interfaces of SiC/SiO$_2$

TEM Study of the Structure of GaAs on Vicinal Si (001) Surface Grown by MBE

Theoretical Investigations of Misfit Dislocations in Pd/MgO(001) Interfaces

Superconducting Mgb2 Thin Films On Silicon Carbide Substrates By Hybrid Physical-Chemical Vapor Deposition