Abstract:It is important to determine the effects of misfit dislocations and other defects on the domain structure, ferroelectricity, conductivity, and other physical properties of ferroelectric thin films to understand their ferroelectric and piezoelectric behaviors. Much attention has been given to ferroelectric PbTiO3/SrTiO3 or PbZr0.2Ti0.8O3/SrTiO3 heterointerfaces, at which improper ferroelectricity, a spin-polarized two-dimensional electron gas, and other physical phenomena have been found. However, those heterointerfaces were all (001) planes, and there has been no experimental studies on the growth of (010) PbTiO3/SrTiO3 heterointerface due to the 6.4% misfit between two materials. In this study, we selected an atomically flat (010) PbTiO3/SrTiO3 heterointerface grown using a two-step hydrothermal method as the research subject, and this is the first experimental report on that interface. Interfacial dislocations can play a significant role in causing dramatic changes in the Curie temperature and polarization distribution near the dislocation cores, especially when the size of a ferroelectric thin film is scaled down to the nanoscale. The results of previous studies on the effects of interfacial dislocations on the physical properties of ferroelectric thin films have been contradictory. Thus, this issue needs to be explored more deeply in the future. This study used aberration corrected scanning transmission electron microscopy (STEM) to study the atomic structure of a (010) PbTiO3/SrTiO3 heterointerface and found periodic misfit dislocations with a Burgers vector of a[001]. The extra planes at the dislocation cores could relieve the misfit strain between the two materials in the [001] direction and thus allowed the growth of such an atomically sharp heterointerface. Moreover, monochromated electron energy-loss spectroscopy with an atomic scale spatial resolution and high energy resolution was used to explore the charge distribution near the periodic misfit dislocation cores. The fine structure of the Ti L edge was quantitatively analyzed by linearly fitting the experimental spectra recorded at various locations near and at the misfit dislocation cores with the Ti3+ and Ti4+ reference spectra. Therefore, the accurate valence change of Ti could be determined, which corresponded to the charge distribution. The probable existence of an aggregation of electrons was found near the a[001] dislocation cores, and the density of the electrons calculated from the valence change was 0.26 electrons per unit cell. Based on an analysis of the fine structure of the oxygen K edge, it could be argued that the electrons aggregating at the dislocation cores came from the oxygen vacancies in the interior regions of the PbTiO3. This aggregation of electrons will probably increase the electron conductivity along the dislocation line. The physics of two-dimensional charge distributions at oxide interfaces have been intensively studied, however, little attention had been given to the one-dimensional charge distribution. Therefore, the results of this study can stimulate research interest in exploring the influence of the interfacial dislocations on the physics of ferroelectric heterointerfaces.

Atomic-scale structure and chemistry of ceramic/metal interfaces—I. Atomic structure of {222} MgO/Cu (Ag) interfaces

The peculiarity of the metal-ceramic interface

Interface structure and energy in Cu–71.8 wt.% Ag

Structure and Bonding at Metal-Ceramic Interfaces: Ag/CdO(001)

ENERGETICS, BONDING MECHANISM AND ELECTRONIC STRUCTURE OF METAL/CERAMIC INTERFACES

Atomic-resolution study on the interface structure and strain state reversion of the Bi2Sr2CuO6+δ/MgO heterostructure

Ag (1 0 0)/mgo (1 0 0) Interface: A Van Der Waals Density Functional Study

Structure evolution of hcp/ccp metal oxide interfaces in solid-state reactions

Characterization of Cubic Phase MgZnO/Si(100) Interfaces

Microscopic characterization and interfacial properties of the Ag/CuO interface: Structure and binding properties of the interface based on first-principles calculations

Periodic Misfit Dislocation And Electron Aggregation At (010) Pbtio3/Srtio3 Heterointerface

Atomistic Simulation of Misfit Dislocation in Metal/oxide Interfaces

Molecular dynamics simulations of interface structure and deformation mechanisms in metal/ceramic composites under tension

Interface Structures in MgB2 Thin Films on (0001) SiC

Stepped Interface and Crystal Orientation in the Eutectic Structure of Cu-71.8%Ag Alloy

An Atomistic Simulation and Phenomenological Approach of Misfit Dislocation in Metal/Oxide Interfaces

Interface-Induced Complex Electronic Interference Structures in Ag Films on Ge(111)

The Effect of Cu Orientation on Fracture Location in Cu<inf>3</inf>Sn-Cu Interface Structure Under Monotonic Loading Condition by Molecular Dynamics Simulation

Two-Dimensional Electron Gas at the Metastable Twisted Interfaces of Cdte/Pbte (111) Single Heterojunctions

Atomistic Study of Misfit Dislocation in Metal/sic(111) Interfaces

First principles calculations on stability, electronic structure and fracture failure of Cu-doped Al(100)/Mg 2 Si(111) interface