Atomic scale structure and local chemistry of CoFeB-MgO perpendicular spin injector
Bingshan Tao,Xavier Devaux,Philippe Barate,Pierre Renucci,Bo Xu,Julien Frougier,Michel Hehn,Stéphane Mangin,Henri Jaffres,Jean-Marie George,Xavier Marie,Xiufeng Han,Zhanguo Wang,Yuan Lu
DOI: https://doi.org/10.1002/9783527808465.emc2016.6392
2016-01-01
Abstract:The development of spin light emitting diode (spin‐LED) with spin injectors with perpendicular magnetic anisotropy (PMA) is a prerequisite for the conversion of carrier spin polarization to the circular polarization (PC) of photon without magnetic field for practical applications. In our previous study, a maximum PC at zero field (20% at 25K, 8% at 300K) was reported with an ultrathin perpendicular MgO/CoFeB spin injector with Ta capping layer [1]. To achieve a good PMA, post‐annealing is indispensable with a narrow optimal window around 250°C. Recent work shows that the PMA can be increased by 20%, by replacing Ta layer with a Mo layer [2]. Moreover, Mo capping increases the temperature stability of the spin injector, allowing post annealing up to 425°C. The specific crystal structure, local chemistry and local bonding of all staking layer that make up the perpendicular spin injector remain unclear, hindering the establishment of the relationships between the material properties and the nanoscale structure. The interfacial anisotropy depends critically on the crystal structure. The composition, chemical states, and local defects in CoFeB and in MgO are known to be critical for transport and magnetic properties. Experimentally the structural and chemical issues in CoFeB‐MgO have been addressed utilising HRTEM, EDS, XPS, secondary‐mass spectroscopy. A consistent picture has not emerged yet due to the difficulty of probing local atomic details. In particular there is many contradictory results on the fate of B following annealing, including diffusion into Ta [3], segregation at the CoFe interface [4], B diffusion into MgO forming a magnesium boride phase [5]. Here, we combine HRTEM, aberration corrected STEM (HAADF and BF) and spatially resolved EELS to follow the structure and the local chemistry of MgO\ CoFeB capped with Ta or Mo, before and after annealing up to 400°C. The spin injectors consist in 2.5 nm of MgO / 1.2 nm CoFeB / 5 nm Ta or Mo deposited on a GaAs‐based LED (Fig 1). For FeCoB layer caped with Ta at temperature higher than 250°C, annealing favours the diffusion of B into Ta when CoFe crystallises then Ta diffuses trough the CoFe layer into the MgO barrier (Fig 2). For CoFeB layer caped with Mo, boron stays in the CoFe layer close to the CoFe‐Mo interface (Fig 3). Mo diffusion into the CoFe layer also occurs, but for higher temperature than for Ta diffusion. In extension we'll show that for both structures, annealing has a strong influence on the Fe/Co ratio at the MgO‐CoFe interface and at the CoFe‐capping layer (Fig 2 and 3). The influence of the structure and of local chemical composition on the properties of the spin injector will be discussed.