Temperature-Dependent Energy Storage Properties of Antiferroelectric Pb0.96la0.04zr0.98ti0.02o3 Thin Films

Zhongqiang Hu,Beihai Ma,R. E. Koritala,Uthamalingam Balachandran

DOI: https://doi.org/10.1063/1.4887066

IF: 4

2014-01-01

Applied Physics Letters

Abstract:The energy storage properties of antiferroelectric (AFE) Pb0.96La0.04Zr0.98Ti0.02O3 (PLZT 4/98/2) thin films were investigated as a function of temperature and applied electric field. The results indicated that recoverable energy density (Ure) and charge-discharge efficiency (η) of PLZT (4/98/2) depend weakly on temperature (from room temperature to 225 °C), while Ure increases linearly and η decreases exponentially with increasing electric field at room temperature. These findings are explained qualitatively on the basis of the kinetics of the temperature-induced transition of AFE-to-paraelectric phase and the field-induced transition of AFE-to-ferroelectric phase, respectively. The high Ure (≈61 J/cm3) and low leakage current density (≈3.5 × 10−8 and 3.5 × 10−5 A/cm2 at 25 and 225 °C, respectively) indicate that antiferroelectric PLZT (4/98/2) is a promising material for high-power energy storage.