Abstract:Scanning electron beam annealing techniques have been applied to the study of diffusion of implanted arsenic and boron difluoride. Electron beam anneals over the time range 0-180s (at Tmax), with peak temperatures in the range 1100-1200°C have been performed on uniformly implanted samples. Controlled slow cooling has been performed for some samples. Direct sample temperature measurements were made using a dual-colour pyrometer under control of a microcomputer, which provided data-logging and feedback control of temperature. The accurate temperature control achieved using this system is important for realistic diffusion modelling. Measurement of the resulting chemical and electrical dopant profiles, using SIMS, RBS and spreading resistance methodshas shown the presence of non-equilibrium diffusion at short times [6]. Channelling RBS studies used to investigate the activation and clustering behaviour of arsenic during the first stages of these very rapid anneals is reported. Modelling of the arsenic diffusion occuring for a range of implant doses subjected to these anneals has been performed,applying avariety of models, including a dynamic clustering model. This dynamic clustering model, based upon an equilibrium cluster model and a measured de-clustering rate, has been shown previously to give good agreementwith experiment. Forthese experiments, a modified de-clustering coefficient was needed to model the diffusion occuring for a wider range of arsenic implants. A solution of the Poisson equation for the internal electric field has also been incorporated. DLTS techniques have been used to study the defects remaining in diodes fabricated using these implagts andanneals. Trap densities of <5×1010cm−3 and leakages of <2×10−9 A.cm2 at −5V have been measured for the best devices, similar tothose observed for control furnace anneals.

Sensitivity Of Bragg Surface Diffraction To Analyze Ion-Implanted Semiconductors

A Study of Diffusion, Clustering and Defects in As+ and Bf2+ Implanted Silicon During Scanning Electron Beam Annealing.

Transient Scanning Electron Beam Annealing Methods Used to Study Diffusion and Defects in Implanted Silicon

Bragg coherent diffractive imaging for defects analysis: Principles, applications, and challenges

Bragg-surface Three-Beam Dynamical X-ray Diffraction

Depth profiles of the interfacial strains of Si 0.7 Ge 0.3 /Si using three-beam Bragg-surface diffraction

Measuring Interface Strains At The Atomic Resolution In Depth Using X-Ray Bragg-Surface Diffraction

Optical anisotropy and strain-induced birefringence in dislocation-free silicon single crystals

High Resolution X-Ray Diffraction Study Of Bragg Peak Width In Strained Ingaas/Inalas/Inp Heterostructures

Revealing nano-scale lattice distortions in implanted material with 3D Bragg ptychography

Simultaneous Bragg Diffraction of X-rays from Liquid-Phase Epitaxial Thin Films

Electrically Active and Inactive B Lattice Sites in Ultrahighly B Doped Si(001): an X-Ray Near-Edge Absorption Fine-Structure and High-Resolution Diffraction Study

Carrier Recombination Activities and Structural Properties of Small-Angle Boundaries in Multicrystalline Silicon

Studies of Fesi2/Si Quantum Dot Nano-Structures by X-Ray Bragg-Surface Diffractions (Bsd)

Measuring Lattice Parameter of Iron Silicides Using X-Ray Bragg-surface Diffraction

Analysis of Implantation-Induced Damage and Amorphization of Gasb

The Structural Evolution of Light-Ion Implanted into GaAs Single Crystal after Annealing

Strain field of InAs QDs on GaAs (001) substrate surface: characterization by synchrotron X-ray Renninger scanning

Determination of Three-Dimensional Interfacial Strain — A Novel Method of Probing Interface Structure with X-ray Bragg-surface Diffraction

Realizing In-Plane Surface Diffraction by X-Ray Multiple-Beam Diffraction with Large Incidence Angle

Coherent X-ray measurements of ion-implantation-induced lattice strains in nano-crystals