Abstract:The successful commercialization of organic field‐effect transistors (OFETs) for advanced integrated organic electronics requires reducing device sizes, which inevitably clashes with the constraints imposed by the contact effects. Herein, it is demonstrated that the contact resistance in OFETs based on monolayer organic semiconductors is extremely low, especially at mild biasing conditions. The contributions of the access resistance and the metal–organic interface resistance are successfully disentangled for the first time. It is shown that, contrary to the conventional view, the contact resistance of monolayer OFETs in the saturation regime exhibits a very weak dependence on the source electrode length. In the monolayer OFETs based on 2,9‐didecyldinaphtho[2,3‐b:2’,3’‐f]thieno[3,2‐b]thiophene (C10‐DNTT), a gate‐voltage‐independent access resistivity (2.2 × 10−2 Ω cm2) at VDS = −1 mV is obtained, while the interfacial metal–organic Schottky contact resistance is found to be negligible. The depletion of a diode associated with the metal–organic interface expands with increasing VDS and eventually bottlenecks the device performance. Finally, how to overcome such a carrier depletion contact resistance bottleneck and achieve OFETs with outstanding performance are shown. These findings pave the way toward sophisticated organic electronic applications based on the use of monolayer OFETs. Herein, the contact resistance is studied in monolayer organic transistors with van der Waals electrodes. The contact resistivity reveals no gate‐dependent behavior under low drain‐source bias while the reverse diode in the metal–organic interface becomes dominated when drain‐source bias increases. Herein, a deep insight into the contact resistance of the monolayer organic transistors is provided.

Ultralow Contact Resistance in Electrolyte-Gated Organic Thin Film Transistors

The Origin of Low Contact Resistance in Monolayer Organic Field‐Effect Transistors with van der Waals Electrodes

A simple and robust approach to reducing contact resistance in organic transistors

Ultralow contact resistance in organic transistors via orbital hybridization

A Critical Outlook for the Pursuit of Lower Contact Resistance in Organic Transistors

Modulating Contact Properties by Molecular Layers in Organic Thin‐film Transistors

Bottom-Contact Organic Field-Effect Transistors Having Low-Dielectric Layer Under Source And Drain Electrodes

Contact Resistance in Organic Field‐Effect Transistors: Conquering the Barrier

On the Role of Contact Resistance and Electrode Modification in Organic Electrochemical Transistors

Optimal Structure for High‐Performance and Low‐Contact‐Resistance Organic Field‐Effect Transistors Using Contact‐Doped Coplanar and Pseudo‐Staggered Device Architectures

Contact resistance in organic transistors that use source and drain electrodes formed by soft contact lamination

Compromise of Electrical Leakage and Capacitance Density Effects: a Facile Route for High Mobility and Sharp Subthreshold Slope in Low-Voltage Operable Organic Field-Effect Transistors

Low-voltage organic transistors and inverters with ultra-thin fluoropolymer gate dielectric

Study of Contact Resistance of High-Mobility Organic Transistors Through Comparisons

High‐Performance Bottom‐Contact Organic Thin‐Film Transistors by Improving the Lateral Contact

Low-voltage-operation of Flexible Organic C8-BTBT Thin-Film Transistors with a Reactively Sputtered AlOx Gate Dielectric

Transparent Junctionless Electric-Double-Layer Transistors Gated by a Reinforced Chitosan-Based Biopolymer Electrolyte

Impact of the Gate Dielectric on Contact Resistance in High‐Mobility Organic Transistors

Liquid-solid Dual-gate Organic Transistors with Tunable Threshold Voltage for Cell Sensing.

Reduced contact resistance in top-contact organic field-effect transistors by interface contact doping