Abstract:Topological insulators (TIs) of the Bi2Se3 family exhibit topological phase transition from three dimensional (3D) to two dimensional (2D) TIs in thin films with decreasing thickness. Understanding the driving force of this transition is critical for the applications of TIs in nanodevices. Herein, we investigate the finite-size effects on the bulk band inversion and the structural relaxation effects on the surface states within the Bi2Se3 family via first-principles calculations. Thin films exposing the three lowest-energy surfaces are modeled by 2D slabs with tunable thicknesses. We propose that the thickness dependence of the topological phase originates from electron confinement created by surface cuts. The increase in film thickness then counteracts these confinement effects, resulting in a monotonically decreasing band gap evaluated at the spin−orbit decoupled level. This dependence of the bulk gap on the thickness is found consistent for various surface slabs. We utilize this relationship to predict the required thickness for maintaining the 3D TI phase and 2D surface states. Our findings underscore the importance of electron delocalization in determining the topological phase of TI thin films. In addition, the actual manifestation of topological surface states on the side surfaces is affected significantly by the co-existing dangling bonds produced by surface cuts. Therefore, surface relaxation plays a crucial role in disentangling the trivial and nontrivial surface states.

Electron States Scattering off Line Edges on the Surface of Topological Insulator

Local density of state oscillations in laterally heterostructured topological insulator-semiconductor systems

Surface States Scattering from A Step Defect in the Topological Insulator Bi2te3

Impact of Step Defects on Surface States of Topological Insulators

Electronic standing waves on the surface of the topological insulator Bi2Te3

Surface-step Defect in Three-Dimensional Topological Insulators: Electric Manipulation of Spin and Quantum Spin Hall Effect

Elastic scattering of surface states on three-dimensional topological insulators

Controlling and distinguishing electronic transport of topological and trivial surface states in a topological insulator

Anisotropic Fabry-Pérot Resonant States Confined Within Nano-Steps on the Topological Insulator Surface

Surface Edge State and Half-Quantized Hall Conductance in Topological Insulators

Electronic Structure Near an Impurity and Terrace on the Surface of A Three-Dimensional Topological Insulator

Electron-Phonon Coupling on the Surface of Topological Insulators

Surface terminations control charge transfer from bulk to surface states in topological insulators

Multiple Scattering Theory for Massive Dirac Fermions on the Topological Insulator Surface with a Strong Warping Effect

Electrical resistance of individual defects at a topological insulator surface

Emergent helical edge states in a hybridized three-dimensional topological insulator

Topological Phase Transitions in a Hybridized Three-Dimensional Topological Insulator

Enhanced Electron Dephasing in Three-Dimensional Topological Insulators

Two Types Of Surface States In Topological Crystalline Insulators

Band Engineering of Dirac Surface States in Topological-Insulator-Based Van Der Waals Heterostructures.

Understanding the Finite Size and Surface Relaxation Effects on the Surface States of Bi2Se3 Family Topological Insulators