Abstract:Topological insulators and superconductors support extended surface states protected against the otherwise localizing effects of static disorder. Specifically, in the Wigner-Dyson insulators belonging to the symmetry classes A, AI, and AII, a band of extended surface states is continuously connected to a likewise extended set of bulk states forming a "bridge" between different surfaces via the mechanism of spectral flow. In this work we show that this mechanism is absent in the majority of non-Wigner-Dyson topological superconductors and chiral topological insulators. In these systems, there is precisely one point with granted extended states, the center of the band, E=0 . Away from it, states are spatially localized, or can be made so by the addition of spatially local potentials. Considering the three-dimensional insulator in class AIII and winding number ν=1 as a paradigmatic case study, we discuss the physical principles behind this phenomenon, and its methodological and applied consequences. In particular, we show that low-energy Dirac approximations in the description of surface states can be treacherous in that they tend to conceal the localizability phenomenon. We also identify markers defined in terms of Berry curvature as measures for the degree of state localization in lattice models, and back our analytical predictions by extensive numerical simulations. A main conclusion of this work is that the surface phenomenology of non-Wigner-Dyson topological insulators is a lot richer than that of their Wigner-Dyson siblings, extreme limits being spectrumwide quantum critical delocalization of all states versus full localization except at the E=0 critical point. As part of our study we identify possible experimental signatures distinguishing between these different alternatives in transport or tunnel spectroscopy. https://doi.org/10.1103/PhysRevX.14.011057 Published by the American Physical Society under the terms of the Creative Commons Attribution 4.0 International license. Further distribution of this work must maintain attribution to the author(s) and the published article's title, journal citation, and DOI. Published by the American Physical Society

Local density of state oscillations in laterally heterostructured topological insulator-semiconductor systems

Electronic standing waves on the surface of the topological insulator Bi2Te3

Weak Anti-localization and Quantum Oscillations of Surface States in Topological Insulator Bi2Se2Te

Semiclassical scattering by edge imperfections in topological insulators under magnetic field

Surface Edge State and Half-Quantized Hall Conductance in Topological Insulators

Electronic Structure Near an Impurity and Terrace on the Surface of A Three-Dimensional Topological Insulator

Surface States Scattering from A Step Defect in the Topological Insulator Bi2te3

Multiple Scattering Theory for Massive Dirac Fermions on the Topological Insulator Surface with a Strong Warping Effect

Anisotropic Fabry-Pérot Resonant States Confined Within Nano-Steps on the Topological Insulator Surface

Coherent oscillations and giant edge magnetoresistance in singly connected topological insulators

Coexistence and Decoupling of Bulk and Edge States in Disordered Two-Dimensional Topological Insulators

Quasiparticle excitations in a one-dimensional interacting topological insulator: Application for dopant-based quantum simulation

Electron-Phonon Coupling on the Surface of Topological Insulators

Discrete Scale Invariance of the Quasi-Bound States at Atomic Vacancies in a Topological Material

Higher-order topological insulators in two-dimensional Dirac materials

Fragility of Surface States in Non-Wigner-Dyson Topological Insulators

Time-reversal Invariant Resonant Backscattering on a Topological Insulator Surface Driven by a Time-Periodic Gate Voltage

Electron-Hole Asymmetry of Surface States in Topological Insulator Sb2Te3 Thin Films Revealed by Magneto-Infrared Spectroscopy

Effective Spin Dephasing Mechanism in Confined Two-Dimensional Topological Insulators

Inelastic Electron Tunneling Spectroscopy for Topological Insulators