Magnetization Reversal Process in Fe/Si (001) Single-Crystalline Film Investigated by Planar Hall Effect

Ye Jun,He Wei,Hu Bo,Tang Jin,Zhang Yong-Sheng,Zhang Xiang-Qun,Chen Zi-Yu,Cheng Zhao-Hua
DOI: https://doi.org/10.1088/1674-1056/24/2/027505
2015-01-01
Abstract:A planar Hall effect(PHE) is introduced to investigate the magnetization reversal process in single-crystalline iron film grown on a Si(001) substrate.Owing to the domain structure of iron film and the characteristics of PHE,the magnetization switches sharply in an angular range of the external field for two steps of 90° domain wall displacement and one step of 180°domain wall displacement near the easy axis,respectively.However,the magnetization reversal process near the hard axis is completed by only one step of 90° domain wall displacement and then rotates coherently.The magnetization reversal process mechanism near the hard axis seems to be a combination of coherent rotation and domain wall displacement.Furthermore,the domain wall pinning energy and uniaxial magnetic anisotropy energy can also be derived from the PHE measurement.
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