Abstract:Field‐free switching of perpendicular TmIG films with a significantly enhanced anomalous Hall resistance readout signal is achieved by incorporating an ultrathin in‐plane anisotropic Co layer at the TmIG/Pt interface. The field‐free switching polarity is dependent on the in‐plane magnetization orientation of the Co layer when switching current parallel to its easy axis. Perpendicularly magnetized ferrimagnetic insulators offer great potential for the development of fast and energy‐efficient spintronic devices. However, a major challenge for these devices is the requirement of an auxiliary magnetic field to achieve spin‐orbit torque (SOT)‐driven magnetization switching, along with the extremely small electric read‐out signal from the adjacent heavy metal layer. In this work, an approach by introducing an ultrathin Co layer primarily with in‐plane magnetization at the interface of the Tm3Fe5O12/Pt bilayers, which enables field‐free deterministic switching of the perpendicular Tm3Fe5O12 layer is demonstrated. Meanwhile, it is observed that a large anomalous Hall resistance readout signal from the coupling‐induced perpendicular component of the interfacial Co, which is nearly two orders of magnitude larger than that observed in Tm3Fe5O12/Pt bilayers. The crucial role played by the Co layer in modifying the SOT is elucidated. This research represents a significant step toward the practical implementation of ferrimagnetic insulator devices.

Field-direction Sensitive Magnetization Reversal in a Perpendicularly Exchange-Coupled System

Magnetic field direction dependent magnetization reversal in synthetic antiferromagnets

Anisotropic intrinsic anomalous Hall effect in ordered 3dPt alloys

Angular Dependence of Magnetization Reversal in Exchange-Biased Co∕Pt Multilayer with Perpendicular Magnetic Anisotropy

Magnetic Field Direction Dependence of Topological Hall Effect Like Features in Synthetic Ferromagnetic and Antiferromagnetic Multilayers

Probing electric field control of magnetism using ferromagnetic resonance

Non-reciprocal magnetoresistance, directional inhomogeneity and mixed symmetry Hall devices

Room-temperature Perpendicular Exchange Coupling and Tunneling Anisotropic Magnetoresistance in an Antiferromagnet-Based Tunnel Junction.

Observation of the In-plane Anomalous Hall Effect induced by Octupole in Magnetization Space

Probing the magnetization switching with in-plane magnetic anisotropy through field-modified magnetoresistance measurement

Asymmetry in Magnetic Behavior Caused by Superposition of Unidirectional and Four-Fold Magnetic Anisotropies in CoPt/FeMn Bilayers

Sign reversal and amplitude enhancement of unidirectional magnetoresistance in CoFe2O4/Pt heterostructures due to spin canting

Angle dependent field-driven reorientation transitions in uniaxial antiferromagnet MnBi$_2$Te$_4$ single crystal

Anomalous Inverse Spin Hall Effect in Perpendicularly Magnetized Co/Pd Multilayers

Anomalous Hall effect from nonlinear magnetoelectric coupling

Interplay between moment-dependent and field-driven unidirectional magnetoresistance in CoFeB/InSb/CdTe heterostructures

Electric-Field Modulation of Interface Magnetic Anisotropy and Spin Reorientation Transition in (Co/Pt) 3 /PMN-PT Heterostructure.

Field‐Free Switching and Enhanced Electrical Detection of Ferrimagnetic Insulators Through an Intermediate Ultrathin Ferromagnetic Metal Layer

Topological Hall-like Magnetoresistance Humps in Anomalous Hall Loops Caused by Planar Hall Effect

Interlayer Magnetostatic Coupling and Linear Magnetoresistance in [pd/co]/mgo/co Junction Sensor

Magnetically Correlated Anisotropic Resistive Switching Manipulated by Electric Field in Co/PMN-PT Heterostructures