Abstract:Electrical readout of magnetic states is a key to realize novel spintronics devices for efficient computing and data storage. Unidirectional magnetoresistance (UMR) in bilayer systems, consisting of a spin source material and a magnetic layer, refers to a change in the longitudinal resistance upon the reversal of magnetization, which typically originates from the interaction of spin-current and magnetization at the interface. Because of UMR s linear dependence on applied charge current and magnetization, it can be used to electrically read the magnetization state. However, in conventional spin source materials, the spin polarization of an electric field induced spin current is restricted to be in the film plane and hence the ensuing UMR can only respond to the in plane component of the magnetization. On the other hand, magnets with perpendicular magnetic anisotropy (PMA) are highly desired for magnetic memory and spin-logic devices, while the electrical read out of PMA magnets through UMR is critically missing. Here, we report the discovery of an unconventional UMR in bilayer heterostructures of a topological semimetal (WTe2) and a PMA ferromagnetic insulator (Cr2Ge2Te6, CGT), which allows to electrically read the up and down magnetic states of the CGT layer by measuring the longitudinal resistance. Our theoretical calculations based on a tight binding model show that the unconventional UMR originates from the interplay of crystal symmetry breaking in WTe2 and magnetic exchange interaction across the WTe2 and CGT interface. Combining with the ability of WTe2 to obtain magnetic field free switching of the PMA magnets, our discoveries open an exciting pathway to achieve two terminal magnetic memory devices that operate solely on the spin orbit torque and UMR, which is critical for developing next-generation non volatile and low power consumption data storage technologies.

Sign reversal and amplitude enhancement of unidirectional magnetoresistance in CoFe2O4/Pt heterostructures due to spin canting

Sign reversal of unidirectional magnetoresistance in monocrystalline Fe/Pt bilayers

Interplay between moment-dependent and field-driven unidirectional magnetoresistance in CoFeB/InSb/CdTe heterostructures

Observation of the Unidirectional Magnetoresistance in Antiferromagnetic Insulator Fe2O3/Pt Bilayers

Observation of Moment-Dependent and Field-Driven Unidirectional Magnetoresistance in CoFeB/InSb/CdTe Heterostructures

Magnetoresistance in Hybrid Pt/CoFe2O4 Bilayers Controlled by Competing Spin Accumulation and Interfacial Chemical Reconstruction

Positive Spin Hall Magnetoresistance in Single-Crystalline Pt/CoO(001) Bilayers

Large unidirectional spin Hall and Rashba-Edelstein magnetoresistance in topological insulator/magnetic insulator heterostructures

Unidirectional magnetoresistance in an insulating compensated ferrimagnet

Unidirectional orbital magnetoresistance in light metal/ferromagnet bilayers

Magnon-mediated spin Hall magnetoresistance and unidirectional magnetoresistance in Pt/NiO/NiFe structures

Electric-Field Modulation of Interface Magnetic Anisotropy and Spin Reorientation Transition in (Co/Pt) 3 /PMN-PT Heterostructure.

Observation of unidirectional spin Hall magnetoresistance in amorphous PtSn4/CoFeB bilayers

Unconventional Unidirectional Magnetoresistance in vdW Heterostructures

Enhanced magnetoresistance induced collaboratively by spin and orbital currents

Unidirectional Magneto-Resistance in Modulation-doped Magnetic Topological Insulators.

Magnonic Unidirectional Spin Hall Magnetoresistance in a Heavy-Metal–Ferromagnetic-Insulator Bilayer

Magnetization Reversal by Out-of-plane Voltage in BiFeO3-based Multiferroic Heterostructures

Field‐Free Switching and Enhanced Electrical Detection of Ferrimagnetic Insulators Through an Intermediate Ultrathin Ferromagnetic Metal Layer

Tunable Spin Hall Magnetoresistance in All-Antiferromagnetic Heterostructures

Probing electric field control of magnetism using ferromagnetic resonance