Abstract:Electrical readout of magnetic states is a key to realize novel spintronics devices for efficient computing and data storage. Unidirectional magnetoresistance (UMR) in bilayer systems, consisting of a spin source material and a magnetic layer, refers to a change in the longitudinal resistance upon the reversal of magnetization, which typically originates from the interaction of spin-current and magnetization at the interface. Because of UMR s linear dependence on applied charge current and magnetization, it can be used to electrically read the magnetization state. However, in conventional spin source materials, the spin polarization of an electric field induced spin current is restricted to be in the film plane and hence the ensuing UMR can only respond to the in plane component of the magnetization. On the other hand, magnets with perpendicular magnetic anisotropy (PMA) are highly desired for magnetic memory and spin-logic devices, while the electrical read out of PMA magnets through UMR is critically missing. Here, we report the discovery of an unconventional UMR in bilayer heterostructures of a topological semimetal (WTe2) and a PMA ferromagnetic insulator (Cr2Ge2Te6, CGT), which allows to electrically read the up and down magnetic states of the CGT layer by measuring the longitudinal resistance. Our theoretical calculations based on a tight binding model show that the unconventional UMR originates from the interplay of crystal symmetry breaking in WTe2 and magnetic exchange interaction across the WTe2 and CGT interface. Combining with the ability of WTe2 to obtain magnetic field free switching of the PMA magnets, our discoveries open an exciting pathway to achieve two terminal magnetic memory devices that operate solely on the spin orbit torque and UMR, which is critical for developing next-generation non volatile and low power consumption data storage technologies.

What problem does this paper attempt to address?

### The problems the paper attempts to solve This paper aims to solve how to read the magnetization state of magnetic materials with perpendicular magnetic anisotropy (PMA) by electrical methods, especially achieving this goal in two - dimensional van der Waals (vdW) heterojunctions. Specifically, the researchers hope to find a method that can distinguish the "up" and "down" magnetization states of the magnetic layer by measuring the longitudinal resistance in a bilayer system. #### Background problems 1. **Limitations of traditional spin - source materials**: In traditional spin - source materials, such as heavy metals and topological insulators, the spin - polarization direction of the electric - field - induced spin current is restricted within the film plane. Therefore, the resulting unidirectional magnetoresistance (UMR) can only respond to the in - plane component of the magnetization intensity and cannot read the magnetization state of magnetic materials with perpendicular magnetic anisotropy. 2. **Importance of PMA magnetic materials**: Magnetic materials with perpendicular magnetic anisotropy are crucial for magnetic storage and spin - logic devices because they can achieve ultrafast operation, thermally stable nanoscale magnetic bits, and reach atto - joule - level logic gates. However, there is currently a lack of methods that can effectively read the magnetization states of these materials. 3. **Requirement for SOT - driven magnetic switching**: In order to achieve non - volatile write operations, the key lies in using spin - orbit torque (SOT) - driven magnetic switching. However, all existing SOT - based planar magnetic storage devices rely on a three - terminal configuration, which limits the size of a single storage node. #### Research objectives - **Discover new UMR effects**: The researchers hope to discover an unconventional UMR effect by using a bilayer heterostructure composed of the topological semimetal WTe₂ and the ferromagnetic insulator Cr₂Ge₂Te₆ (CGT) with perpendicular magnetic anisotropy, so that the magnetization state of the CGT layer can be read by measuring the longitudinal resistance. - **Realize two - terminal magnetic storage devices**: The ultimate goal is to develop SOT - based two - terminal magnetic storage devices. These devices rely only on spin - orbit torque and UMR effects and are expected to be used in next - generation non - volatile and low - power - consumption data storage technologies. ### Main contributions - **Experimental verification**: It has been experimentally verified that an unconventional UMR effect exists in the WTe₂/CGT bilayer heterostructure, and the "up" and "down" magnetization states of the CGT layer can be distinguished by measuring the longitudinal resistance. - **Theoretical explanation**: Theoretical calculations based on the tight - binding model show that this unconventional UMR effect originates from the crystal symmetry breaking in WTe₂ and the magnetic exchange interaction at the WTe₂/CGT interface. - **Potential applications**: It provides a new approach for realizing SOT - based two - terminal magnetic storage devices, which is of great significance for the development of next - generation non - volatile and low - power - consumption data storage technologies. In summary, this paper solves the key problem of how to read the magnetization state of magnetic materials with perpendicular magnetic anisotropy by electrical methods and provides new ideas and technical means for future magnetic storage device design.

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