Current-induced magnetization switching in epitaxial L10-FePt/Cr heterostructures through orbital Hall effect
H. C. Lyu,Y. C. Zhao,J. Qi,G. Yang,W. D. Qin,B. K. Shao,Y. Zhang,C. Q. Hu,K. Wang,Q. Q. Zhang,J. Y. Zhang,T. Zhu,Y. W. Long,H. X. Wei,B. G. Shen,S. G. Wang
DOI: https://doi.org/10.1063/5.0087562
IF: 2.877
2022-07-09
Journal of Applied Physics
Abstract:Journal of Applied Physics, Volume 132, Issue 1, July 2022. The current-induced magnetization switching (CIMS) was successfully observed in epitaxial L10-FePt/CrxPt1−x (0 ≤ x ≤ 1) heterostructures grown by molecular beam epitaxy with large perpendicular magnetic anisotropy. With increasing Cr content, the critical switching current density (Jc) in FePt/CrxPt1−x heterostructures exhibited a decreasing trend, where it was greatly reduced by 69% in FePt/Cr (3d) films compared to FePt/Pt (5d) films with strong spin–orbit coupling. Furthermore, the same switching polarities were observed for all FePt/CrxPt1−x samples, indicating that the orbital Hall effect played a dominant role in CIMS for FePt/Cr films because of opposite spin Hall angles for Cr and Pt. Our results will put forward the applications of L10-FePt in collaboration with the orbital Hall effect from 3d metals in current-controlled magnetic random access memory and neuromorphic computing.
physics, applied