Abstract:Numerous discoveries of tunable magnetic properties via magneto‐ionic gating lack a quantitative understanding of reversible and irreversible effects of ionic infiltration. This study employs VSM, SQUID magnetometry, and XMCD to reveal the control of magnetization, anisotropy, proximity‐induced moments, and angular momenta in Pd/Co/Pd trilayers. Together, these findings offer crucial insights for optimizing thin film heterostructures for magneto‐ionic gating. Despite the rampant discovery of tunable magnetic properties using magneto‐ionic gating, e.g., magnetic anisotropy, exchange bias, and exchange interactions, there are few studies that give a quantitative understanding of the reversible and irreversible effects of ionic infiltration. In this study, in situ vibrating sample magnetometry, superconducting quantum interference device magnetometry, and X‐ray magnetic circular dichroism (XMCD) reveal the reversible and irreversible control of magnetization, anisotropy, proximity‐effects, spin, and orbital angular momenta. Pd/Co/Pd trilayers, loaded using solid‐state hydrogen‐ion gating, show a decrease in the saturation magnetization of Co, and an increase in the proximity‐induced moment of Pd. This results in little to no change in the net effective magnetization, yet, allows for the effective anisotropy to be reversibly controlled by 270 kJ m−3. The reversible control of the effective anisotropy is dominated by a reversible change in surface anisotropy, however, under repeated cycling, irreversible evolution occurs in the heterostructure. XMCD measurements indicate this is partly due to hydrogen‐induced modification of the spin and orbital angular momenta. Together, these measurements indicate that the origin of the reversible and irreversible effects of magneto‐ionic gating is interfacial and provides crucial insight to scale and optimize thin film heterostructures for enhanced longevity and faster response time.

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Giant gate-controlled proximity magnetoresistance in semiconductor-based ferromagnetic–non-magnetic bilayers

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Spin Colossal Magnetoresistance in an Antiferromagnetic Insulator