Abstract:The performance of AlGaN-based light-emitting diodes (LEDs) emitting at UVAUVC regions can be severely compromised due to the polarization difference (P) between the last quantum barrier (LQB) and the electron blocking layer (EBL). In this work, the different situations of the bandgap difference (Eg) and P of InAlNAlGaN and AlGaNAlGaN heterojunctions fully strained on GaN and AlN substrates are discussed. It shows that the InAlNAlGaN heterojunctions could produce positive or negative sheet charges at the heterointerface under Eg >0, which could not be realized by the conventional AlGaNAlGaN heterojunctions. To demonstrate and utilize the feature, the polarization-modulated InAlN LQBs with 0.140.16 indium compositions of 320 nm UVB LEDs are designed and investigated. It is observed that the InAlN LQBs could replace the conventional AlGaN LQB to improve electron confinement and hole injection by affecting effective barrier heights. By modulating the LQBEBL polarization using InAlN, the proposed UV LED has a 32 enhancement in internal quantum efficiency and lower efficiency droop (from 16.9 to 0.7) compared with the conventional one without modulation. The operation voltage at the same current also significantly decreases. The improvement of optical output power and wall plug efficiency at 60 mA in proposed structures are near 90 and 100, respectively. This study provides a novel and highly effective methodology for development of high efficiency UV LEDs.

Efficiency Enhancement of an InGaN Light-Emitting Diode with a U-Ingan/alingan Superlattice Last Quantum Barrier

Performance Improvement of InGaN LEDs by Using Strain Compensated Last Quantum Barrier and Electron Blocking Layer

Improvement of Blue Llight-Ight-ight-eeemitting Mitting Ddiodes Iodes with an Undoped Graded Layer As the Electrons Tunneling Barrier Layer

Improved the AlGaN-Based Ultraviolet LEDs Performance with Super-Lattice Structure Last Barrier

Enhanced Performance of InGaN‐Based Blue LEDs Using an AlGaN/InGaN Super‐Lattice Last Quantum Barrier

Performance Enhancement of Ingan-Based Light-Emitting Diodes with Ingan/Alinn/Ingan Composition-Graded Barriers

Performance Improvement of AlGaN-based Deep-Ultraviolet Light-Emitting Diodes Via Si-doping Design of Quantum Barriers

A Gan-Algan-Ingan Last Quantum Barrier in an Ingan/Gan Multiple-Quantum-Well Blue Led

InGaN multiple quantum well based light-emitting diodes with indium composition gradient InGaN quantum barriers

Performance Improvements for Algan-Based Deep Ultraviolet Light-Emitting Diodes with the P-Type and Thickened Last Quantum Barrier

Improved Carrier Injection and Confinement in InGaN Light-Emitting Diodes Containing GaN/AlGaN/GaN Triangular Barriers

Efficiency and radiative recombination rate enhancement in GaN/AlGaN multi-quantum well-based electron blocking layer free UV-LED for improved luminescence

Performance Analysis of Gan-Based Light-Emitting Diodes with Lattice-Matched Ingan/Alinn/Ingan Quantum-Well Barriers

Effect of Graded Al Content in the Last Quantum Barrier on the Luminescence Properties of Ultraviolet InGaN/AlGaN Multiple Quantum Wells

Performance Improvement of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes with Step-Like Quantum Barriers

Advantages of AlGaN-based Deep-Ultraviolet Light-Emitting Diodes with an Al-composition Graded Quantum Barrier.

Polarization Modulation at Last Quantum Barrier for High Efficiency AlGaN-Based UV LED

Enhanced Performance of Gan-Based Light-Emitting Diodes by Using A P-Inalgan/Gan Superlattice As Electron Blocking Layer

Impact of Composite Last Quantum Barrier on the Performance of AlGaN-based Deep Ultraviolet Light-Emitting Diode

Last-Quantum-Barrier-Free AlGaN Deep Ultraviolet LEDs With Boosted Efficiency

Efficiency Droop Suppression and Light Output Power Enhancement of Deep Ultraviolet Light-Emitting Diode by Incorporating Inverted-V-Shaped Quantum Barriers