Tuning Conductance in C60 Devices: Defective C60 and Endohedral C60 Complex

Guiqin Li
DOI: https://doi.org/10.1007/s00339-014-8761-0
2014-01-01
Abstract:The transport properties and I–V characteristics of C 60 , defective C 60 , endohedral C 59 complex, and endohedral C 60 complex devices have been investigated. The transmission coefficients of the C 60 devices have been found to be largely affected by either defect or doping an atom in the center of the C 60 . The conductance in C 60 devices can also be tuned by both defect and doping. In particular, doping an atom into the center of C 60 has an obvious effect on tuning conductance. C@C 60 , N@C 60 , and O@C 60 double the current of the C 60 device, while B@C 60 terminates the current at low voltage.
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