Abstract:Diffusion and segregation behavior of hydrogen and oxygen in silicon carbide subjected to H implantation and subsequent annealing were studied with a number of analytical techniques including Secondary Ion Mass Spectrometry (SIMS), Rutherford backscattering spectrometry in channeling geometry, field emission scanning electron microscopy, optical microscopy, cross-sectional transmission electron microscopy, and atomic force microscopy. H+ implantation was carried out with energies of 200 keV, 500 keV, or 1 MeV to doses of 1 × 1016, 1 × 1017, or 2 × 1017 ion/cm2, and thermal treatment was conducted in flowing argon for 1 to 2 h at temperatures of 740, 780, 1000, or 1100 °C. The process of migration and eventual loss of hydrogen in a point defect regime is postulated to proceed to a large extent through ionized vacancies. This conclusion was derived from the observed substantial difference in H mobilities in n- vs. p-type SiC as the population of ionized vacancies is governed by the Fermi-Dirac statistics, i.e., the position of the Fermi level. For higher doses, a well defined buried planar zone forms in SiC at the maximum of deposited energy, comprising numerous microvoids and platelets that are trapping sites for hydrogen atoms. At a certain temperature, a more or less complete exfoliation of the implanted layer is observed. For a 1 MeV implant heated to 1100 °C in nominally pure argon, SIMS profiling reveals a considerable oxygen peak of 1016 O atoms/cm2 situated at a depth close to that of the peak of the implanted H+. Similarly, 1100 °C annealing of a 200 keV implant induces the formation of a thin oxide (4 nm), located at the interface between the implanted layer and the substrate as evidenced by both SIMS and HRTEM. The measurements were taken on the part of the sample that remained un-exfoliated. In view of a lack of convincing evidence that a hexagonal SiC might contain substantial amounts of oxygen, further investigation is under way to elucidate its presence in the irradiation-damaged films.

Mechanism for Hydrogen-Promoted Information of Helium Polymer in Silicon Carbide Material: A Diffusion Study

Assessing the Effect of Hydrogen on the Electronic Properties of 4H-Sic

The Effect of Relatively Low Hydrogen Dilution on the Properties of Carbon-Rich Hydrogenated Amorphous Silicon Carbide Films

Diffusion and impurity segregation in hydrogen-implanted silicon carbide

Site Preference and Diffusion Behaviors of H Influenced by the Implanted-He in 3C-Β SiC

Dynamical, Vibrational, Electronic and Optical Properties in c-Si:H with Bond-Centered-Hydrogen, H Dimers and Other H Complexes

Impurities in 4H Silicon Carbide: Site Preference, Lattice Distortion, Solubility, and Charge Transition Levels

Site preference and diffusion behaviors of H influenced by the implanted-He in 3C-\b{eta} SiC

Velocity and Stability of Condensed Polymorphic SiH4: A High-Temperature High-Pressure Brillouin Investigation*

Microstructural and Elemental Evolution of Polycrystalline Α-Sic Irradiated with Ultra-High-fluence Helium Ions Before and after Annealing

Structural, optical, and electronic properties of hydrogenated polymorphous silicon films deposited from silane–hydrogen and silane–helium mixtures

Segregation and diffusion behaviours of helium at grain boundaries in silicon carbide ceramics: first-principles calculations and experimental investigations

Helium Incorporation Stabilized Direct-gap Silicides

Investigation of Exfoliation Efficiency of 6H-SiC Implanted Sequentially with He+ and H2+ Ions

Effect of hydrogen on the unintentional doping of 4H silicon carbide

The Effect of Hydrogen Species on the Electronic Properties of Nc-Si:H Prepared in A Triode Pecvd System

Strong Induced Polarity Between Poly(Vinylidene Fluoride-Co-Chlorotrifluoroethylene) And Alpha-Sic And Its Influence On Dielectric Permittivity And Loss Of Their Composites

Optical and structural properties of 6H–SiC irradiated by Si3+⧹He+ coimplantation

Diffusion of Hydrogen Isotopes in 3C-Sic in HTR-PM: A First-Principles Study

Helium Permeability Measurement of Sic Ceramic Composites for Advanced Reactor Application

Diffusion of Hydrogen in Proton Implanted Silicon: Dependence on the Hydrogen Concentration