Effect of Sputtering Input Power of Co on Structure and Magnetic Properties of Fe-Co-N Thin Films
Wang Xin,Jia Hui,Zheng Weitao,Xu Wei,Long Beihong
DOI: https://doi.org/10.4028/www.scientific.net/amr.79-82.635
2009-01-01
Advanced Materials Research
Abstract:Fe-Co-N thin films with various Co content were synthesized on Si (111) substrate using facing-target magnetron sputtering by changing sputtering input power on Co target. During deposition, the input power on Fe target was kept at 160 W. The composition, structure, and magnetic properties were examined by X-ray photoelectron spectroscopy, X-ray diffraction (XRD), transmission electron microscopy (TEM), and superconducting quantum interference device. XRD and TEM investigations showed that at lower input power of 11.2 W on Co target, the phases in the film were -(Fe,Co)4N and Co3N. Increasing sputtering input power, the content of Co in the film increased. At input power of 14 W, film contained -(Fe,Co)8N phase was produced which exhibited higher saturation magnetization (252.85 Am2/kg) and lower value of coercivity (3.66 kAm-1), corresponded to the 12% content of Co in the film.