Characterization of Free-Standing Nanocrystalline Ni 55.2 Mn 24.7 Ga 19.9 Gd 0.2 High Temperature Shape Memory Thin Film

Jian Yao,Xiaohang Zheng,Wei Cai,Jiehe Sui
DOI: https://doi.org/10.1016/j.jallcom.2015.11.191
IF: 6.2
2015-01-01
Journal of Alloys and Compounds
Abstract:Nanocrystalline Ni55.2Mn24.7Ga19.9Gd0.2 high temperature shape memory thin films had been prepared by the DC magnetron sputtering followed by rapid thermal annealing (RTA). Surface morphology, crystal structure, martensitic transformation behavior and shape memory effect (SME) were systematically investigated. The results showed that as-deposited film displayed a coexistence of amorphous and nanocrystal, while the annealed film was a single phase of seven-layered modulated martensite structure with the grain size about 200-500 nm at room temperature. The annealed film showed one step reversible martensitic transformation with martensitic transformation start temperature of 283 degrees C. Adjacent lamellar variants exhibited a (202) type. twin relationship and well coherent interlamellar interfaces. The annealed Ni55.2Mn24.7Ga19.9Gd0.2 thin film displayed a stable SME above 200 degrees C, which could be used in high temperature field as micro-electro-mechanical-system (MEMS) devices. (C) 2015 Elsevier B.V. All rights reserved.
What problem does this paper attempt to address?