Shape Memory and Ferromagnetic Shape Memory Effects in Single-Crystal Ni2mnga Thin Films
JW Dong,JQ Xie,J Lu,C Adelmann,CJ Palmstrom,J Cui,Q Pan,TW Shield,RD James,S McKernan
DOI: https://doi.org/10.1063/1.1643199
IF: 2.877
2004-01-01
Journal of Applied Physics
Abstract:Epitaxial Ni2MnGa and Ni2Mn1.2Ga0.8 thin films have been grown by molecular beam epitaxy on GaAs (001) substrates with Sc0.3Er0.7As interlayers. Structural characterization of as-grown films confirms the epitaxially stabilized single crystal structure of the films and indicates that the films grow pseudomorphically on GaAs (001) substrates in a tetragonal structure (a=b=5.65 Å, c=6.18 Å). The films are ferromagnetic at room temperature with coercivity of ∼50 Oe, saturation magnetization of ∼250 emu/cm3, and weak in-plane magnetic anisotropy. The Curie temperature of the films is found to be ∼340 K. However, while the films were attached to the substrate martensitic phase transformations were not observed. In order to observe martensitic phase transformations, free-standing Ni2MnGa bridges and cantilevers were fabricated using front and back side photolithography together with a combination of dry and wet etching. After removal of the substrate, the free-standing bridges and cantilevers showed a unique temperature dependent shape. Observation using a polarized-light optical microscope during repeated thermocycling showed large movement of the cantilevers, confirming a two-way shape memory effect in the free-standing films. Using 100 μm long free-standing bridges, field induced strain or the ferromagnetic shape memory effect was observed in a stoichiometric Ni2MnGa sample at 135 K with the magnetic fields perpendicular to the sample surface.