High Temperature Annealed Bi3.15nd0.85ti3o12 Nanostructures Through Self-Assembly

J. Ma,X. M. Lu,W. Cai,Y. Kan,J. S. Zhu
DOI: https://doi.org/10.1080/10584580601085537
2007-01-01
Integrated Ferroelectrics
Abstract:Nanoscale ferroelectric materials are candidates for ultrahigh density ultralarge scale integrated memory chips. In this paper, we fabricated one coating of neodymium substituted Bi4Ti3O12 nanostructures on Pt/Ti/SiO2/Si substrates. The method we used here was spin coating precursors with a series of concentration on the substrates and then annealing at 750 degrees C, 800 degrees C and 850 degrees C in the oxygen atmosphere to get the self-patterning nano particles. X-ray diffraction (XRD), scanning probe microscope (SEM) and Scanning probe microscope (SPM) detections were performed on the high temperature annealed samples to reveal the surface morphologies and the crystalline microstructures. It is found that when the annealing temperature is higher than 800 degrees C, the Pt substrates nearly have no effect on the surface of the samples; and the average height of the nano particles is enhanced to approximately 50 nm.
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