Graphene saturable absorber for diode pumped Yb:Sc 2 SiO 5 mode-locked laser

wei cai,shouzhen jiang,shicai xu,yaqi li,jie liu,chun li,lihe zheng,liangbi su,jun xu
DOI: https://doi.org/10.1016/j.optlastec.2014.06.010
IF: 4.939
2015-01-01
Optics & Laser Technology
Abstract:High-quality monolayer graphene was successfully fabricated by chemical vapor deposition technology. By using the graphene as a saturable absorber, the Yb:Sc2SiO5 crystal passively mode-locked laser was demonstrated for the first time. Stable mode-locked laser pulses were obtained with a repetition rate of 90.7MHz and an average output power of 480mW at the center wavelength of 1062.8nm. The maximum single pulse energy and the maximum peak power were 5.3nJ and 378W, respectively.
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