Large energy pulse generation modulated by graphene epitaxially grown on silicon carbide

Haohai Yu,Xiufang Chen,Huaijin Zhang,Xiangang Xu,Xiaobo Hu,Zhengping Wang,Jiyang Wang,Shidong Zhuang,Minhua Jiang
DOI: https://doi.org/10.1021/nn102280m
IF: 17.1
2010-12-28
ACS Nano
Abstract:Graphene grown by thermal decomposition of a two-inch 6H silicon carbide (SiC) wafers surface was used to modulate a large energy pulse laser. Because of its saturable absorbing properties, graphene was used as a passive Q-switcher, and because of its high refractive index the SiC substrate was used as an output coupler. Together they formed a setup where the passively Q-switched neodymium-doped yttrium aluminum garnet (Nd:YAG) crystal laser was realized with the pulse energy of 159.2 nJ. Our results illustrate the feasibility of using graphene as an inexpensive Q-switcher for solid-state lasers and its promising applications in integrated optics.
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