Effect of Interface States on the Performance of Gaas P(+)-I Far-Infrared Detectors

AGU Perera,WZ Shen,M Ershov,HC Liu,M Buchanan,SD Gunapala,SV Bandara,JK Liu,HH Ye,WJ Schaff

DOI: https://doi.org/10.1116/1.582233

2000-01-01

Abstract:Interface states have been shown to have an appreciable effect on the performance of p-GaAs multilayer (p+-i-p+-i-…) homojunction interfacial work function internal photoemission (HIWIP) far-infrared detectors. In this article, a comparison of detector performance was made of p-GaAs HIWIP detectors with different interface state densities, with the emphasis on the detector’s dark current, noise, and capacitance characteristics.