Abstract:Injection current dependences of electroluminescence transition energy in blue InGaN/GaN multiple quantum wells light emitting diodes (LEDs) with different quantum barrier thicknesses under pulsed current conditions have been analyzed taking into account the related effects including deformation caused by lattice strain, quantum confined Stark effects due to polarization field partly screened by carriers, band gap renormalization, Stokes-like shift due to compositional fluctuations which are supposed to be random alloy fluctuations in the sub-nanometer scale, band filling effect (Burstein-Moss shift), and quantum levels in finite triangular wells. The bandgap renormalization and band filling effect occurring at high concentrations oppose one another, however, the renormalization effect dominates in the concentration range studied, since the band filling effect arising from the filling in the tail states in the valence band of quantum wells is much smaller than the case in the bulk materials. In order to correlate the carrier densities with current densities, the nonradiative recombination rates were deduced experimentally by curve-fitting to the external quantum efficiencies. The transition energies in LEDs both with 15 nm quantum barriers and 5 nm quantum barriers, calculated using full strengths of theoretical macroscopic polarization given by Barnardini and Fiorentini [Phys. Status Solidi B 216, 391 (1999)] are in excellent accordance with experimental results. The LED with 5 nm barriers has been shown to exhibit a higher transition energy and a smaller blue shift than those of LED with 15 nm barriers, which is mainly caused by the smaller internal polarization field in the quantum wells.

The Effect of Silicon Doping in the Barrier on the Electroluminescence of Ingan/Gan Multiple Quantum Well Light Emitting Diodes

Effect of Si Doping in Barriers of Ingan/Gan Multiple Quantum Wells on the Performance of Green Light-Emitting Diodes

Influence of in Doping in GaN Barriers on Luminescence Properties of InGaN/GaN Multiple Quantum Well LEDs

Influence of Si-doping in the Barriers on Optical and Electrical Properties of InGaN/GaN MQW LEDs

Effect Of An Indium-Doped Barrier On Enhanced Near-Ultraviolet Emission From Ingan/Algan: In Multiple Quantum Wells Grown On Si(111)

Influence of Indium Content on the Unintentional Background Doping and Device Performance of InGaN/GaN Multiple-Quantum-Well Solar Cells

Effects of Photogenerated Carriers in GaN Layers on the Photoluminescence Characteristics of Violet Light-Emitting InGaN/GaN Multiple Quantum Wells

Effect of barrier thickness on photoelectric properties of InGaN/GaN asymmetric multiple-quantum-well structure light-emitting diode

Electroluminescence Property Improvement by Adjusting Quantum Wells’ Position Relative to P-Doped Region in InGaN/GaN Multiple-Quantum-well Light Emitting Diodes

Leakage of holes induced by Si doping in the AlGaN first barrier layer in GaN/AlGaN multiple-quantum-well ultraviolet light-emitting diodes

Band Gap Renormalization and Carrier Localization Effects in InGaN∕GaN Quantum-Wells Light Emitting Diodes with Si Doped Barriers

Enhanced hole transport in InGaN/GaN multiple quantum well light-emitting diodes with a p-type doped quantum barrier

Reduce the efficiency droop by p-doped quantum well barriers in InGaN multiple quantum well

Effects of Mg Doping in the Quantum Barriers on the Efficiency Droop of GaN Based Light Emitting Diodes

Effect of Graded Al Content in the Last Quantum Barrier on the Luminescence Properties of Ultraviolet InGaN/AlGaN Multiple Quantum Wells

Comparative Study on the Luminescence Properties of Violet Light-Emitting InGaN/GaN Multiple Quantum Wells with Different Barrier Thickness

Evaluation Of Polarization Field In Ingan/Gan Multiple Quantum Well Structures By Using Electroluminescence Spectra Shift

Performance Analysis of Gan-Based Light-Emitting Diodes with Lattice-Matched Ingan/Alinn/Ingan Quantum-Well Barriers

Effect of P–n Junction Location on Characteristics of InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes

Injection Current Dependences of Electroluminescence Transition Energy in Ingan/Gan Multiple Quantum Wells Light Emitting Diodes under Pulsed Current Conditions (vol 118, 033101, 2015)

Local doping modulation for improving quantum efficiency in GaN-based light-emitting diodes