Abstract:Memristive switching in oxide semiconductors relies on the formation and disruption of conductive nano-filaments [1].This effect is considered promising for the next generation of non-volatile memories.Yet, the switching event is a complicated electronic and ionic process, which may involve more than one mechanism.In order to elucidate the switching mechanism, advanced microscopy investigations proved challenging because of heavily dependence of the results on specimen preparation techniques.Important information can be obtained if switching leads to a macroscopic change of nonelectrical properties, for instance magnetic properties.In this respect, n-type Mn-ZnO and p-type NiO provide a unique testbeds since the magnetic properties of these oxides are strongly dependent on the distribution of oxygen vacancies [2].We show that resistive switching in n-type ferromagnetic Mn-ZnO and p-type antiferromagnetic NiO coexists with a switching of the magnetic phase.Thin films of these oxides were sandwiched between two metallic electrodes and resistive switching was induced.Nano-devices were patterned out of the trilayers by resorting to electron beam lithography and physical etching.We found that a switching of the resistance corresponds to a switching of the magnetic phase in the film [3,4].By measuring the magnetic properties of the devices in the two resistive states, we can draw important conclusions on the underlying switching mechanism.For instance, in Mn-ZnO the effect is not filamentary type and occurs uniformly under the interface, whereas in NiO the effect is filamentary type.By measuring the change of magnetic properties we could exclude that switching was due to the formation of Ni-ion filaments across the device.We have demonstrated [4] that the switching is due to the formation and rapture of oxygen-vacancy filaments.

Non-Volatile, Reversible Switching Of The Magnetic Moment In Mn-Doped Zno Films

Resistive switching in Nb-doped SrZrO3 memory films: An effective approach with a Cu modulation layer

Non-Volatile, Electric Control of Magnetism in Mn-Substituted Zno

Reversible Transition of Volatile to Non-Volatile Resistive Switching in Cu/SiNx/ZnO/Pt Memristor

Investigation of the non-volatile resistance change in noncentrosymmetric compounds

Revealing the Nature of Nano-filaments in Memristive Oxide Memories

Electric-field-controlled Nonvolatile Magnetic Switching and Resistive Change in La0.6Sr0.4MnO3/0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (011) Heterostructure at Room Temperature

Resistive Switching and Magnetic Modulation in Cobalt-Doped Zno

Magnetism As a Probe of the Origin of Memristive Switching in P-Type Antiferromagnetic NiO

Manipulating The Magnetism And Resistance State Of Mn:Zno/Pb(Zr0.52ti0.48)O-3 Heterostructured Films Through Electric Fields

Electric switch of magnetoresistance in the Pb(Zr0.2Ti0.8)O3/(La0.67Ca0.33)MnO3 heterostructure film

Resistive Switching and Its Modulating Ferromagnetism and Magnetoresistance of a ZnO-Co/SiO2-Co Film

Reversible Ferromagnetic Switching in Zno:(Co,Mn) Powders

Switching Behavior Induced by Electric and Magnetic Fields in (La 0.73 Bi 0.27 ) 0.67 Ca 0.33 MnO 3

Magnetically Induced Nonvolatile Magnetoresistance and Resistance Memory Effect in Phase-Separated Manganite Thin Films

Magnetization and Resistance Switchings Induced by Electric Field in Epitaxial Mn:ZnO/BiFeO3 Multiferroic Heterostructures at Room Temperature.

Electric Field-Induced Coexistence of Nonvolatile Resistive and Magnetization Switching in Pt/NiO/Nb:SrTiO3 Heterostructure

Electric-Field Driven Insulator-Metal Transition And Tunable Magnetoresistance In Zno Thin Film

Realization of resistive switching and magnetoresistance in ZnO/ZnO-Co composite materials

Atomic-scale observation of strain-dependent reversible topotactic transition in La<sub>0.7</sub>Sr<sub>0.3</sub>MnO<sub>x</sub> films under an ultra-high vacuum environment

Ultra-Large Non-Volatile Modulation Of Magnetic Moments In Pbzr0.2ti0.8o3/Mgo/La0.7sr0.3mno3 Heterostructure At Room Temperature Via Interfacial Polarization Mediation