Abstract:In this review, we provide an overview of our work in resistive switching mechanisms on oxide-based resistance random access memory (RRAM) devices. Based on the investigation of physical and chemical mechanisms, we focus on its materials, device structures, and treatment methods so as to provide an in-depth perspective of state-of-the-art oxide-based RRAM. The critical voltage and constant reaction energy properties were found, which can be used to prospectively modulate voltage and operation time to control RRAM device working performance and forecast material composition. The quantized switching phenomena in RRAM devices were demonstrated at ultra-cryogenic temperature (4K), which is attributed to the atomic-level reaction in metallic filament. In the aspect of chemical mechanisms, we use the Coulomb Faraday theorem to investigate the chemical reaction equations of RRAM for the first time. We can clearly observe that the first-order reaction series is the basis for chemical reaction during reset process in the study. Furthermore, the activation energy of chemical reactions can be extracted by changing temperature during the reset process, from which the oxygen ion reaction process can be found in the RRAM device. As for its materials, silicon oxide is compatible to semiconductor fabrication lines. It is especially promising for the silicon oxide-doped metal technology to be introduced into the industry. Based on that, double-ended graphene oxide-doped silicon oxide based via-structure RRAM with filament self-aligning formation, and self-current limiting operation ability is demonstrated. The outstanding device characteristics are attributed to the oxidation and reduction of graphene oxide flakes formed during the sputter process. Besides, we have also adopted a new concept of supercritical CO2 fluid treatment to efficiently reduce the operation current of RRAM devices for portable electronic applications.

Material and Process Optimization of Correlated Electron Random Access Memories

Operating Current Reduction in Nickel Oxide Correlated Electron Random Access Memories (cerams) Through Controlled Fabrication Processes

Device Characterization of Correlated Electron Random Access Memories

Study of the Resistive Switching Characteristics and Mechanisms of Pt/CeOx/TiN Structure for RRAM Applications

Enhanced Resistive Switching Performance of Aluminum Oxide Dielectric with a Low Temperature Solution-Processed Method

Transition Metal Oxide Thin Films for Nonvolatile Resistive Random Access Memory Applications

Resistance switching in amorphous and crystalline binary oxides grown by electron beam evaporation and atomic layer deposition

Modulating Metallic Conductive Filaments Via Bilayer Oxides in Resistive Switching Memory

Atomic Layer Deposited Oxide-Based Nanocomposite Structures with Embedded CoPtx Nanocrystals for Resistive Random Access Memory Applications

A Non-Filamentary Model for Unipolar Switching Transition Metal Oxide Resistance Random Access Memories

Tuning oxygen vacancies and resistive switching properties in ultra-thin HfO2 RRAM via TiN bottom electrode and interface engineering

Ce-doping Induced Enhancement of Resistive Switching Performance of Pt / NiFe2O4 / Pt Memory Devices

Physical and Chemical Mechanisms in Oxide-Based Resistance Random Access Memory.

Novel hypostasis of old materials in oxide electronics: metal oxides for resistive random access memory applications

Ultralow Set Voltage and Enhanced Switching Reliability for Resistive Random-Access Memory Enabled by an Electrodeposited Nanocone Array.

Material Engineering Technique for Siox-Based Embedded Rram with Cmos Compatible Process

A cold-electrode metal–oxide resistive random access memory

A Flexible Nickel-Oxide-Based RRAM Device Prepared Using the Solution Combustion Method

Mechanism for an enhanced resistive switching effect of bilayer NiOx/TiO2 for resistive random access memory

Optimizing molybdenum oxide based RRAM with vacuum rapid thermal annealing and carbon quantum dots

Self-Formed Conductive Nanofilaments in (bi, Mn)O-X for Ultralow-Power Memory Devices