Abstract:We report on a theoretical study of the electronic structures of InSb and GaSb nanowires oriented along the [001] and [111] crystallographic directions. The nanowires are described by atomistic, tight-binding models, including spin-orbit interaction. The band structures and the wave functions of the nanowires are calculated by means of a Lanczos iteration algorithm. For the [001]-oriented InSb and GaSb nanowires, the systems with both square and rectangular cross sections are considered. Here, it is found that all the energy bands are doubly degenerate. Although the lowest conduction bands in these nanowires show good parabolic dispersions, the top valence bands show rich and complex structures. In particular, the topmost valence bands of the nanowires with a square cross section show a double maximum structure. In the nanowires with a rectangular cross section, this double maximum structure is suppressed, and the top valence bands gradually develop into parabolic bands as the aspect ratio of the cross section is increased. For the [111]-oriented InSb and GaSb nanowires, the systems with hexagonal cross sections are considered. It is found that all the bands at the Γ-point are again doubly degenerate. However, some of them will split into non-degenerate bands when the wave vector moves away from the Γ-point. Although the lowest conduction bands again show good parabolic dispersions, the topmost valence bands do not show the double maximum structure. Instead, they show a single maximum structure with its maximum at a wave vector slightly away from the Γ-point. The wave functions of the band states near the band gaps of the [001]- and [111]-oriented InSb and GaSb nanowires are also calculated and are presented in terms of probability distributions in the cross sections. It is found that although the probability distributions of the band states in the [001]-oriented nanowires with a rectangular cross section could be qualitatively described by one-band effective mass theory, the probability distributions of the band states in the [001]-oriented nanowires with a square cross section and the [111]-oriented nanowires with a hexagonal cross section show characteristic patterns with symmetries closely related to the irreducible representations of the relevant double point groups and, in general, go beyond the prediction of a simple one-band effective mass theory. We also investigate the effects of quantum confinement on the band structures of the [001]- and [111]-oriented InSb and GaSb nanowires and present an empirical formula for the description of quantization energies of the band edge states in the nanowires, which could be used to estimate the enhancement of the band gaps of the nanowires as a result of quantum confinement. The size dependencies of the electron and hole effective masses in these nanowires are also investigated and discussed.

Planar-defect Characteristics and Cross-Sections of 〈001〉, 〈111〉, and 〈112〉 InAs Nanowires

Controlled-Direction Growth of Planar InAsSb Nanowires on Si Substrates Without Foreign Catalysts

Orientation Dependence of Electromechanical Characteristics of Defect-free InAs Nanowires.

Electronic Structure of [100]-Oriented Free-Standing Inas and Inp Nanowires with Square and Rectangular Cross Sections

Electronic Structures of [1 1 1]-Oriented Free-Standing InAs and InP Nanowires

Remarkable and Crystal‐Structure‐Dependent Piezoelectric and Piezoresistive Effects of InAs Nanowires

Crystal Phase- and Orientation-Dependent Electrical Transport Properties of InAs Nanowires

Morphology and Microstructure of Inas Nanowires on Gaas Substrates Grown by Molecular Beam Epitaxy

Electronic Structures of [001]- and [111]-Oriented Insb and Gasb Free-Standing Nanowires

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Growth of Pure Wurtzite InAs Nanowires over a Wide Diameter Range

Investigation of Optoelectronic Characteristics of Intrinsic Point Defects on InAs Nanowires

Palladium catalyzed defect-free zinc-blende structured InAs nanowires

3D Atomic-Scale Insights into Anisotropic Core-Shell-Structured InGaAs Nanowires Grown by Metal-Organic Chemical Vapor Deposition.

Crystallography of Phase Transformation in the Self-Inclined Inas Nanowires Grown on Gaas{111}

Catalyst Orientation-Induced Growth of Defect-Free Zinc-Blende Structured ⟨001̅⟩ InAs Nanowires.

High Purity GaAs Nanowires Free of Planar Defects: Growth and Characterization

Phonon thermal transport in InAs nanowires with different size and growth directions

Silver-assisted growth of high-quality InAs 1- x Sb x nanowires by molecular-beam epitaxy

Crystal structure and optical properties of GaAs nanowires

Crystal Growth of Si Nanowires and Formation of Longitudinal Planar Defects