Structure, electrical, and optical properties of reactively sputter-deposited Ta—Al—N thin films
Fırat Anğay,Sophie Camelio,Dominique Eyidi,Bärbel Krause,Gregory Abadias
DOI: https://doi.org/10.1063/5.0082537
IF: 2.877
2022-03-14
Journal of Applied Physics
Abstract:We report on the influence of Al content on the structural, electrical, and optical properties of polycrystalline ternary Ta—Al—N thin films. Ta 1−x Al x N y thin films with x up to 0.69 and 0.92 ≤ y ≤ 1.22 were deposited on silicon substrates by means of direct current reactive magnetron co-sputtering from elemental Ta and Al targets. The elemental composition, crystal structure, bonding state, and electrical and optical properties of the deposited films were characterized using wavelength-dispersive x-ray spectrometry, x-ray diffraction, x-ray photoelectron spectroscopy, four-point probe electrical resistance, and spectroscopic ellipsometry (SE), respectively. The real part (ɛ 1 ) and imaginary part (ɛ 2 ) of the dielectric constants were derived from the SE data, which were simulated and fitted by using a Drude and Lorentz oscillator models. The Ta 1−x Al x N y films are characterized by a compact microstructure, which becomes more columnar with increasing Al content. It is found that the incorporation of Al into TaN lattice results in the stabilization of cubic Ta 1−x Al x N y solid solutions up to x = 0.40, while a hexagonal phase is formed for 0.48 ≤ x ≤ 0.69. This structural transition is accompanied by a change in the chemical bonding state, high electrical resistivity (8–10 mΩ cm), and semi-transparent character. Ternary Ta 1−x Al x N y alloys with a small amount of Al (x = 0.02 and 0.06) show superior electrical and optical conductivities compared to a binary TaN compound, making them appealing material candidates for UV plasmonic applications.
physics, applied