Abstract:The electronic defect structure of CuGaS2, a wide bandgap material, presents an opportunity for enhanced understanding of defects in Cu(In,Ga)S2 solar cells. Our findings indicate that the optical transition of CuGaS2 is impacted by the presence of a shallow donor level, as well as two shallow acceptor levels and an additional deeper acceptor level. However, it is the deep defect transitions that originate from two broad mid‐gap defect levels that are detrimental to the performance of CuGaS2 solar cells. CuGaS2 films grown by physical vapor deposition were studied by photoluminescence (PL) spectroscopy, using excitation intensity and temperature‐dependent analyses. We observed free and bound exciton recombinations, three donor‐to‐acceptor (DA) transitions, and deep‐level transitions. The DA transitions at ~2.41, 2.398, and ~2.29 eV are attributed to a common donor level ~35 meV and two shallow acceptors at ~75 and ~90 meV and a deeper acceptor at 210 meV above the valence band. This electronic structure is similar to those of other chalcopyrite materials. The observed DA transitions are accompanied by several phonon replicas. The Cu‐rich and near‐stoichiometric CuGaS2 films are dominated by transitions involving the acceptor at 210 meV. All films show deep‐level transitions at ~2.15 and 1.85 eV due to broad deep defect bands. The slightly Cu‐deficient films were dominated by intense transitions at ~2.45 eV, which were attributed to excitonic transitions, and a broad defect transition at 2.15 eV.

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Study of Intrinsic Defect States of FeSe with Scanning Tunneling Microscopy

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Investigation into complex defect properties of near-stoichiometric Cu2ZnSnSe4 thin film

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