Abstract:Ferromagnetic pillars standing on a substrate hold promise for use in recording segments of multibit nonvolatile memories. These pillars exhibit high thermal stability in their magnetization owing to the influence of shape and perpendicular magnetic anisotropies. Recent micromagnetic simulations have demonstrated the feasibility of magnetization control in these pillars. Such control was achieved through the spin-transfer torque induced by the current flowing within the pillar and the spin-orbit torque generated by the current flowing through the heavy-metal lead at the bottom of the pillars. However, the presence of two current paths complicates circuit design, posing challenges in device integration. To solve this problem, we propose a new structure wherein a pillar is placed on a thin film with in-plane magnetization. When current flows through this structure, a torque is applied to the magnetization of the pillar, similar to that of the three-terminal structure. Magnetization reversal and control in the proposed structure were demonstrated using micromagnetic simulations. Specifically, magnetization reversal was achieved in a 100 nm-long permalloy pillar, whereas the magnetization corresponding to a three-bit sequence was generated in a 250 nm-long permalloy pillar. We propose two methods to control the magnetization of multibit memory. One method uses two different current intensities, whereas the other uses constant and pulsed currents of identical intensity. Notably, in the proposed structure, magnetization was controlled using only a unidirectional current. In particular, magnetization can be controlled with a pulsed current using a single current strength. This advancement will simplify the circuitry required to control magnetic memory, bringing the realization of magnetic memory devices closer to reality.

Fabrication of Current-Induced Magnetization Switching Devices Using Etch-Back Planarization Process

Fabrication of A Nanoelectromechanical Switch Using A Suspended Carbon Nanotube

Nanoelectromechanical Switches with Vertically Aligned Carbon Nanotubes

Single current control of magnetization in vertical high-aspect-ratio nanopillars on in-plane magnetization layers

Ultralow Electric Current-Assisted Magnetization Switching due to Thermally Engineered Magnetic Anisotropy

Magnetization Switching In 70-Nm-Wide Pseudo-Spin-Valve Nanoelements

Fabrication Process of the Nano-Scale Spin Transfer Torque Device

Electric field control of deterministic current-induced magnetization switching in a hybrid ferromagnetic/ferroelectric structure

Bipolar Electric-Field Switching of Perpendicular Magnetic Tunnel Junctions through Voltage-Controlled Exchange Coupling

Voltage-Driven 180° Magnetization Switching in Magnetoelectric Heterostructures

Nonvolatile Magnetoelectric Switching of Magnetic Tunnel Junctions with Dipole Interaction

Current-induced Pinwheel Oscillations in Perpendicular Magnetic Anisotropy Spin Valve Nanopillars

Electric-field Control of Perpendicular Magnetic Anisotropy by Resistive Switching Via Electrochemical Metallization

Enhancement of Voltage Controlled Magnetic Anisotropy (VCMA) Through Electron Depletion

Current-Driven Magnetic Memory with Tunable Magnetization Switching

Domain Nucleation Mediated Spin-Transfer Switching in Magnetic Nanopillars with Perpendicular Anisotropy

Field-free spin-orbit torque switching of composite perpendicular CoFeB/Gd/CoFeB layers utilized for three-terminal magnetic tunnel junctions

Magnetoresistance Effect Realized in Current-in-plane Van Der Waals Spin Valve Structure by Electrically Switchable Magnetization

Electric-field-assisted non-volatile magnetic switching in a magnetoelectronic hybrid structure

Spin current control of magnetism

Voltage-induced magnetization switching method utilizing dipole coupled magnetic tunnel junction