Fabrication Process of the Nano-Scale Spin Transfer Torque Device

Ren Min,Chen Peiyi,Deng Ning
DOI: https://doi.org/10.3969/j.issn.1671-4776.2011.11.001
2011-01-01
Abstract:An improved fabrication process of spin transfer torque devices was presented.After nanoscale graphics formed by the electron beam lithography,the magnetic multilayer film CoFe/Cu/CoFe/Ta with nanopillar pseudo-spin-valve structure was successfully fabricated by ion beam etching,isolation layer deposition with photoresist and lift-off successively,and its transverse size was 140 nm×70 nm.The electronic and magnetic characteristics tests of the structure were conducted.The giant magnetic resistor(GMR) effect was observed when the externally applied magnetic field was from-500 to +500 Oe(1 A/m=4π×10-3 Oe).The current-induced magnetization switching(CIMS) effect was observed when a current vertical was applied to the film plane at the zero externally applied magnetic field,and the critical current density of the magnetization switching was 108 A/cm2.The proposed process has advantages of less steps and easy realization,therefore it has a broad prospect of application in the fabrication of nano-scale devices such as the spin transfer torque devices.
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