X-ray Photoelectron Spectroscopy Study of the Oxidation of Se Passivated Si(001)

F. S. Aguirre-Tostado,D. Layton,A. Herrera-Gomez,R. M. Wallace,J. Zhu,G. Larrieu,E. Maldonado,W. P. Kirk,M. Tao
DOI: https://doi.org/10.1063/1.2794858
IF: 2.877
2007-01-01
Journal of Applied Physics
Abstract:The chemical and electronic passivation of semiconductors is an important issue for the fabrication of electronic devices. In this work we use angle resolved x-ray photoelectron spectroscopy to study the chemical passivation of silicon (001) surface with selenium at a surface coverage close to 1 monolayer. The interaction of Se with silicon breaks the Si–Si dimers leading to a change in the surface reconstruction from a (2×1) to (1×1) symmetry. The silicon surface covered with a selenium monolayer was exposed to dry oxygen at 300°C for 80min. We find that the presence of the Se monolayer does not appreciably reduce the formation of a SiO2 layer.
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