Abstract:The injection of a spin-polarized current into a semiconductor, one of the key requirements for spintronics, poses the challenge for computational materials science to possibly screen suitable materials. In a number of theoretical investigations, we have put forward magnetic intermetallic compounds grown epitaxially on Si as promising candidates. We employed density functional theory calculations with the GGA-PBE exchange-correlation functional and the full-potential augmented plane wave plus local orbital (FP-APW+lo) method, as implemented in the WIEN2k package. In the spirit of computational materials science, we investigated the stability and magnetic properties of thin films of the Heusler alloy Co2MnSi, as well as of binary late transition metal monosilicides, in contact with the Si surface. For the Heusler alloy Co2MnSi, we could show that the (001) surface retains the half-metallic character of the bulk if a fully Mn-terminated surface is prepared. At interfaces with Si, a finite density of states at the Fermi energy was found for both spin channels, but the half-metallic behavior recovers only a few layers away from the interface. For the monosilicides of the late 3d-transition metals (Mn, Fe, Co, Ni), we predict a CsCl-like structure that has not yet been observed as bulk compound but may be stabilized epitaxially on Si(001). For very thin films of CoSi and MnSi grown in this structure, our calculations find a ferromagnetic ground state. Recently, we identified the atomic structure of MnSi films on Si(111) which is close to the natural crystal structure of bulk MnSi (B20), and also shows large magnetic moments of the Mn atoms at the surface and interface. All MnSi films have a high degree of spin polarization (between 30% and 50%, depending on film thickness) at the Fermi level, and are thus promising materials for fabricating electrical contacts for spin injection into Si.

Magnetic Property of Transition Metal-Si Atomic Line on Silicon Σ3 Grain Boundary: A Theoretical Study

Tuning Magnetism in Transition-Metal-Doped 3c Silicon Carbide Polytype

First-Principles Study Of Transition Metal Impurities In Si

First-principles Study of Thin Magnetic Transition-Metal Silicide Films on Si(001)

The evolution of Σ3 grain boundaries in the strip-cast Hi-B grain orientated Fe-6.5% Si alloy

Magnetic Properties Of Transition-Metal Impurities In Silicon Quantum Dots

Transition-Metal Silicides As Materials for Magnet-Semiconductor Heterostructures

Ferromagnetism in Mn-doped Silicon

Recombination Activity Of Sigma 3 Boundaries In Boron-Doped Multicrystalline Silicon: Influence Of Iron Contamination

Electronic and magnetic properties of CrI3 grain boundary

Ferromagnetic Properties of Silicon Doped with Manganese Atoms

Magnetic-Transition-Induced Colossal Magnetoresistance in the Ferrimagnetic Semiconductor Mn$_3$Si$_2$Te$_6$

Magnetic Dirac Fermions and Chern Insulator Supported on Pristine Silicon Surface

Nanoengineering of an Si/MnGe Quantum Dot Superlattice for High Curie-temperature Ferromagnetism.

The Nature of a Low Angle Grain-Boundary in a Si Bi-Crystal with Added Fe Impurities

Magnetic-Transition-Induced Colossal Magnetoresistance in the Ferrimagnetic Semiconductor Mn_3Si_2Te_6

Ab Initio Study of Transition-Metal Silicide Films on Si(001)

Ferromagnetism and nonmetallic transport of thin-film α-FeSi(2): a stabilized metastable material.

Microscopic model for the semiconductor-to-ferromagnetic-metal transition in FeSi$_{1-x}$Ge$_{x}$ Alloys

Atomic-Scale Mechanism Of Grain Boundary Effects On The Magnetic And Transport Properties Of Fe3o4 Bicrystal Films

Magnetic 3d Transition Metal Atomic Chains Modulated by the Intrinsic Valley Structure in MX Monolayer