Abstract:The ferrimagnetic semiconductor ${\mathrm{Mn}}_{3}{\mathrm{Si}}_{2}{\mathrm{Te}}_{6}$ keeps the records of colossal magnetoresistance (CMR) and angular magnetoresistance (AMR). Here we report tuning the electronic transport properties via doping and pressure in ${({\mathrm{Mn}}_{1\text{\ensuremath{-}}x}{\mathrm{Mg}}_{x})}_{3}{\mathrm{Si}}_{2}{\mathrm{Te}}_{6}$. As the substitution of nonmagnetic ${\mathrm{Mg}}^{2+}$ for magnetic ${\mathrm{Mn}}^{2+}$, ferrimagnetic transition temperature ${T}_{C}$ gradually decreases, while the resistivity increases significantly. At the same time, the CMR and AMR are both enhanced for the low-doping compositions (e.g., $x=0.1$ and 0.2), which can be attributed to the doping-induced broadening of the band gap and a larger variation range of the resistivity when undergoing a metal-insulator transition by applying a magnetic field along the $c$ axis. On the contrary, ${T}_{C}$ rises with increasing pressure due to the enhancement of the magnetic exchange interactions until a structural transition occurs at $\ensuremath{\sim}13$ GPa. Meanwhile, the activation gap is lowered under pressure and the magnetoresistance is decreased dramatically above 6 GPa where the gap is closed. At 20 and 26 GPa, weak drops in resistance indicating a superconducting transition at $\ensuremath{\sim}5$ K are observed. The results reveal that doping and pressure are effective methods to tune the activation gap, and correspondingly, the CMR and AMR in nodal-line semiconductors, providing an approach to investigate the magnetoresistance materials for novel spintronic devices.

Magnetic-Transition-Induced Colossal Magnetoresistance in the Ferrimagnetic Semiconductor Mn_3Si_2Te_6

Magnetic-Transition-Induced Colossal Magnetoresistance in the Ferrimagnetic Semiconductor Mn$_3$Si$_2$Te$_6$

Colossal magnetoresistance via avoiding fully polarized magnetization in the ferrimagnetic insulator Mn 3 Si 2 Te 6

Tuning the Colossal Magnetoresistance in ( Mn1−xMgx)3Si2Te6

Gap and Magnetic Engineering Via Doping and Pressure in Tuning the Colossal Magnetoresistance in (Mn_1-Xmg_x)_3si_2te_6

Gap and magnetic engineering via doping and pressure in tuning the colossal magnetoresistance in (Mn$_{1-x}$Mg$_x$)$_3$Si$_2$Te$_6$

Unconventional insulator-to-metal phase transition in Mn3Si2Te6

Tuning the Colossal Magnetoresistance in (mn 1- X Mg X ) 3 Si 2 Te 6 by Engineering the Gap and Magnetic Properties Via Doping and Pressure

Pressure Engineering of Colossal Magnetoresistance in the Ferrimagnetic Nodal-Line Semiconductor Mn3Si2Te6

Anomalous Nernst Effect and Topological Nernst Effect in the Ferrimagnetic Nodal-Line Semiconductor Mn3Si2Te6

Uncovering the path to low-field colossal magnetoresistance: A microscopic view of field driven percolative insulator-to-metal transition in manganites

Field-induced metal-to-insulator transition and colossal anisotropic magnetoresistance in a nearly Dirac material EuMnSb2

Electrically Tunable, Rapid Spin-Orbit Torque Induced Modulation of Colossal Magnetoresistance in Mn_3Si_2Te_6 Nanoflakes

Variation of Magnetic Properties with Current in Ferrimagnetic Semiconductor Mn3Si2Te6

Anomalous Nernst effect in a ferrimagnetic nodal-line semiconductor Mn$_3$Si$_2$Te$_6$

Anapole, chiral and orbital states in Mn3Si2Te6

High-temperature concomitant metal-insulator and spin-reorientation transitions in a compressed nodal-line ferrimagnet Mn3Si2Te6

Covalency, correlations, and inter-layer interactions governing the magnetic and electronic structure of Mn$_3$Si$_2$Te$_6$

Anomalously Large Anisotropic Magnetoresistance In A Perovskite Manganite

Electrically tunable, rapid spin-orbit torque induced modulation of colossal magnetoresistance in Mn$_3$Si$_2$Te$_6$ nanoflakes

Colossal magnetoresistance from spin-polarized polarons in an Ising system