Abstract:Light emission from semiconductors depends not only on the efficiency of carrier injection and recombination but also extraction efficiency. For ultraviolet emission from high band gap materials such as ZnO, nanowires have higher extraction efficiencies than thin films, but conventional approaches for creating a p-n diode result in low efficiency. We exploited the noncentral symmetric nature of n-type ZnO nanowire/p-type GaN substrate to create a piezoelectric ! potential within the nanowire by applying stress. Because of the polarization of ions in a crystal that has noncentral symmetry, a piezoelectric potential (piezopotential) is created in the crystal under stress. The piezopotential acts as a "gate" voltage to tune the charge transport and enhance carrier injection, which is called the piezo-phototronic effect. We propose that band modification traps free carriers at the interface region in a channel created by the local piezoelectric charges. The emission intensity and injection current at a fixed applied voltage have been enhanced by a factor of 17 and 4, respectively, after applying a 0.093% compressive strain and improved conversion efficiency by a factor of 4.25. This huge enhanced performance is suggested arising from an effective increase in the local "biased voltage" as a result of the band modification caused by piezopotential and the trapping of holes at the interface region in a channel created by the local piezoelectric charges near the interface. Our study can be extended from ultraviolet range to visible range for a variety of optoelectronic devices that are important for today's safe, green, and renewable energy technology.

Laser Annealing of Laser Assisted Molecular Beam Deposited Zno Thin Films with Application to Metal-Semiconductor-Metal Photodetectors

Synthetic and Effect of Annealing on the Luminescent Properties of Zno Nanowire

Enhancing Light Emission of Zno Microwire-Based Diodes by Piezo-Phototronic Effect

Enhanced Visible Light Response of ZnO Porous Thin Film by Post-Annealing Treatment

Annealing Effects on the Microstructure and Photoluminescence Properties of Ni-Doped Zno Films

Effects of Annealing Temperature on the Characteristics of Ga-doped ZnO Film Metal-Semiconductor-metal Ultraviolet Photodetectors

Nanosecond-laser annealing of zinc oxide thin-films: The effect of the laser wavelength and fluence

The Effect of Annealing Ambience on the Material and Photodetector Characteristics of Sputtered ZnGa2O4 Films

Influence of Post-Annealing Temperature on Properties of ZnO:Li Thin Films

Influence of Thin Metal Nanolayers on the Photodetective Properties of Zno Thin Films

Annealing Effect on Properties of Zno Thin Films Grown on LiNbO3 Substrates by MOCVD

Effect of Post-Thermal Annealing on Properties of Zno Thin Film Grown on C-Al(2)O(3)By Metal-Organic Chemical Vapor Deposition

Influences of Substrate and Annealing on the Structural and Optical Properties and Photoluminescence of Nanocrystalline Zno Films Prepared by Plasma Assisted Pulsed Laser Deposition

Annealing effect on optical properties of ZnO films fabricated by cathodic electrodeposition

Photoconductivity of p-Type Na-doped ZnMgO Thin Films

High Performance Ultraviolet Photodetectors with Atomic-Layer-deposited ZnO Films Via Low-Temperature Post-Annealing in Air

Thermal Engineering in ALD-grown ZGO Thin Films for High-Performance Photodetectors

Influence of Annealing on Microstructure and Photoluminescence Properties of Al-Doped ZnO Films

Thermal annealing effect on optical properties of electrodeposited ZnO thin films

In Situ and Ex Situ Investigation on the Annealing Performance of the Zno Film Grown by Ion Beam Deposition

Effects of ZnO Seed Layer Annealing Temperature on the Properties of N-Zno NWs/Al(2)O(3)/p-Si Heterojunction.