Effects Of Magnetocrystalline Anisotropy And Magnetization Saturation On The Mechanically Induced Switching In Nanomagnets

Min Yi,Bai-Xiang Xu,Zhigang Shen

DOI: https://doi.org/10.1063/1.4914485

IF: 2.877

2015-01-01

Journal of Applied Physics

Abstract:The effects of magnetocrystalline anisotropy (K-u) and magnetization saturation (M-s) on the mechanically induced switching in nanomagnets are studied using a constraint-free phase field model, which allows explicit magneto-mechanical coupling and strictly constant magnetization magnitude. The effects of K-u and M-s on the transition boundary between the coherent and incoherent switching modes are presented in terms of the nanomagnet geometry. It is found that M-s rather than K-u can affect the transition boundary between the two switching modes. In the coherent mode, there exists a critical strain (epsilon(c)) to induce a deterministic 90 degrees switching. By using the dynamic nature and overrun behavior of the magnetization, a deterministic 180 degrees switching can occur if the mechanical strain is removed once the magnetization rotates to the largest achievable angle (v(1)(m)). For 90 degrees switching, increasing K-u can enhance both epsilon(c) and v(1)(m), whereas M-s incurs no noticeable changes. For 180 degrees switching, the switching time (t(s)) increases with M-s linearly, but initially decreases with increasing K-u and then saturates. The results for t(s) suggest that moderate K-u and M-s are advisable to simultaneously obtain relatively low ec, quick switching, high storage density, and high magnetization-state stability in nanomagnets. This work provides insight on tuning mechanically assisted nanomagnet-based logic and memory devices through M-s and K-u. (C) 2015 AIP Publishing LLC.