Magnetization switching and performance of an optimized bicomponent multiferroic nanomagnet

Yongshun Xia,Xiaokuo Yang,Shuqing Dou,Huanqing Cui,Bo Wei,Bujia Liang,Xu Yan

DOI: https://doi.org/10.1063/5.0206692

IF: 1.697

2024-04-01

AIP Advances

Abstract:Achieving complete magnetization switching is a significant challenge in the electrical control of magnetic devices. In this paper, we propose a structure called bicomponent multiferroic nanomagnet (BMN) to study strain-mediated magnetization switching behavior. The BMN consists of a complete piezoelectric layer and a magnetostrictive layer made of bicomponent magnetic materials. Our team successfully developed a dynamic model for the magnetization of BMNs. By micromagnetic simulation, the results show that the strict requirements for a precise applied voltage period can be overcome in such a BMN, and a 180° magnetization switching can be achieved with only a square-wave voltage signal and a pulse width (tth) larger than 0.5 ns, given that the amplitude of the voltage is 60 mV. In addition, we also investigated the tolerance window of material composition and geometry, and proved that BMNs have sufficient error margins and the switching rate of BMNs can reach 1.67 GHz within the error margins at room temperature. Our proposed BMN device has a simple structure and low energy consumption as it does not require precise piezoelectric layer design or stringent voltage clocking requirements. The energy consumption per switching is only 7.3 aJ. These findings provide significant guidance for the design of nanomagnetic logic and memory devices and lay a strong foundation for the application of strain-mediated magnetization switching technology.

materials science, multidisciplinary,nanoscience & nanotechnology,physics, applied

What problem does this paper attempt to address?

The problem that this paper attempts to solve is the challenge of achieving complete magnetization reversal in electrical - controlled magnetic devices. Specifically, the authors proposed a structure called a two - component multiferroic nanomagnet (BMN) to study the strain - mediated magnetization reversal behavior. The BMN consists of a complete piezoelectric layer and a magnetostrictive layer made of a two - component magnetic material. Through micromagnetic simulations, the research results show that in the BMN, only a square - wave voltage signal (with a pulse width greater than 0.5 nanoseconds and a voltage amplitude of 60 millivolts) is required to overcome the strict requirements for the precisely applied voltage cycle and achieve a 180° magnetization reversal. In addition, the authors also studied the tolerance windows of material composition and geometry, demonstrating that the BMN has a sufficient error margin at room temperature, and within this error margin, the switching rate of the BMN can reach 1.67 GHz. The energy consumption per switching is only 7.3 attojoules. These findings provide important guidance for the design of nanomagnetic logic and storage devices and lay a solid foundation for the application of strain - mediated magnetization reversal techniques.