Abstract:Ultrafast thermomechanical responses of silicon thin films due to ultrashort-pulsed laser irradiation were investigated using an atomic-level hybrid method coupling the molecular dynamics and the ultrafast two-step energy transport model. The dynamic reflectivity and absorption were considered, and the effects of laser fluence and pulse duration on the thermomechanical response were studied. It was found that both the carrier temperature and number density rapidly increase to their maximum while the lattice temperature rises at a much slower rate. The ultrafast laser heating could induce a strong stress wave in the film, with the maximum compressive and tensile stress occurring near the front and back surfaces, respectively. For laser pulses of the same duration, the higher the laser fluence is, the higher the carrier temperature and density and lattice temperature are induced. For the same laser fluence, a longer pulse generally produces lower carrier density and temperatures and weaker stress shock strength. However, for the fluence of 0.2 J/cm(2), the lowest lattice temperature was simulated for a 100-fs pulse compared to the 1-ps and 5-ps pulses, due to the increase of reflectivity by high carrier density. It is also shown that the optical properties as functions of lattice temperature usually employed are not suited for modeling ultrafast laser interactions with silicon materials.

Annealing and Quenching Effect in the Localized States Emission on Nanosilicon Fabricated by Pulsed Laser

Molecular Dynamic Simulation of Non-Melt Laser Annealing Process

Combined Continuum-Atomistic Modeling of Ultrashort-Pulsed Laser Irradiation of Silicon

Influence of annealing on microstructures and photoluminescence of nano-composite silicon film

Effect of annealing on microstructure and photoluminescence of nano-composite silicon film

Lasing with Pumping Levels of Si Nanocrystals on Silicon Wafer

Effect of Annealing on SiC Thin Films Prepared by Pulsed Laser Deposition

Resistivity Reduction in Heavily Doped Polycrystalline Silicon Using Cw-Laser and Pulsed-Laser Annealing

Patterned structures of silicon nanocrystals prepared by laser annealing

Selective Contact Anneal Effects on Indium Oxide Nanowire Transistors Using Femtosecond Laser

Effect of high-power nanosecond and femtosecond laser pulses on silicon nanostructures

Pulsed Laser Heating-induced Surface Rapid Cooling and Amorphization

Emission cells with quantum dots on silicon chip prepared by using fs pulsed laser

The Mechanism Behind the Annealing‐Induced Reduction of Infrared Absorption in Zinc‐Hyperdoped Silicon

Fabrication of Mie-resonant silicon nanoparticles using laser annealing for surface-enhanced fluorescence spectroscopy

Transmission electron microscopy characterizations of local amorphization of single crystal silicon by nanosecond pulsed laser direct writing

Efficient activation of telecom emitters in silicon upon ns pulsed laser annealing

Evolution of Photoluminescence from Si Nanocrystals Embedded in a SiO2 Matrix Prepared by Reactive Pulsed Laser Deposition

The Ohmic Contact of 4H-Sic Power Devices by Pulse Laser Annealing and Rapid Thermal Annealing

Refining silicon nitride waveguide quality through femtosecond laser annealing

In Situ Annealing Enhancement of the Optical Properties and Laser Device Performance of InAs Quantum Dots Grown on Si Substrates.