Abstract:It is significantly important to modulate the electrical properties of graphene films through doping for building desired electronic devices. One of the effective doping methods is the chemical vapor deposition (CVD) of graphene films with heteroatom doping during the process, but this usually results in nitrogen-doped graphene with low doping levels, high defect density, and low carrier mobility. In this work, we developed a novel condensation-assisted CVD method for the synthesis of high-quality nitrogen-doped graphene (NG) films at low temperatures of 400 °C using solid 3,4,5-trichloropyridine as a carbon and nitrogen source. The condensation system was employed to reduce the volatilization of the solid source during the non-growth stage, which leads to a great improvement of quality of as-prepared NG films. Compared to the one synthesized using conventional CVD methods, the NG films synthesized using condensation-assisted CVD present extremely low defects with a ratio of from D- to G-peak intensity (ID/IG) in the Raman spectrum lower than 0.35. The corresponding total N content, graphitic nitrogen/total nitrogen ratio, and carrier mobility reach 3.2 at%, 67%, and 727 cm2V−1S−1, respectively. This improved condensation-assisted CVD method provides a facile and well-controlled approach for fabricating high-quality NG films, which would be very useful for building electronic devices with high electrical performance.

Low-Temperature Growth of Large-Area Heteroatom-Doped Graphene Film

Direct growth of large-area graphene and boron nitride heterostructures by a co-segregation method

Synthesis of Large-Scale Undoped and Nitrogen-Doped Amorphous Graphene on Mgo Substrate by Chemical Vapor Deposition

A Simple Method to Synthesize Continuous Large Area Nitrogen-Doped Graphene

Growth of Low-Defect Nitrogen-Doped Graphene Film Using Condensation-Assisted Chemical Vapor Deposition Method

Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils

Low pressure chemical vapor deposition synthesis of large area hetero-doped mono- and few- layer graphene with nitrogen and oxygen species

Low temperature critical growth of high quality nitrogen doped graphene on dielectrics by plasma-enhanced chemical vapor deposition.

One-step Synthesis of Nitrogen-Doped Graphene from a Sole Aromatic Precursor

Growth and Properties of Large-Area Sulfur-Doped Graphene Films

Low-Temperature Growth of Graphene by Chemical Vapor Deposition Using Solid and Liquid Carbon Sources

Ultra-Large Single-Layer Graphene Obtained From Solution Chemical Reduction And Its Electrical Properties

Low-Temperature and Rapid Growth of Large Single-Crystalline Graphene with Ethane

CVD Growth of Large Area and Uniform Graphene on Tilted Copper Foil for High Performance Flexible Transparent Conductive Film

Direct Growth of High Crystallinity Graphene from Water-Soluble Polymer Powders

Synthesis of S-doped graphene by liquid precursor.

Hydrogen-dominated metal-free growth of graphitic-nitrogen doped graphene with <i>n</i>-type transport behaviors

Catalyst-free Synthesis of Nitrogen-Doped Graphene Via Thermal Annealing Graphite Oxide with Melamine and Its Excellent Electrocatalysis.

Growth of Large-Area Graphene Films from Metal-Carbon Melts

Large-Scale Growth and Characterizations of Nitrogen-Doped Monolayer Graphene Sheets

Low-Temperature Nitrogen Doping of Nanocrystalline Graphene Films with Tunable Pyridinic-N and Pyrrolic-N by Cold-Wall Plasma-Assisted Chemical Vapor Deposition