Abstract:It is significantly important to modulate the electrical properties of graphene films through doping for building desired electronic devices. One of the effective doping methods is the chemical vapor deposition (CVD) of graphene films with heteroatom doping during the process, but this usually results in nitrogen-doped graphene with low doping levels, high defect density, and low carrier mobility. In this work, we developed a novel condensation-assisted CVD method for the synthesis of high-quality nitrogen-doped graphene (NG) films at low temperatures of 400 °C using solid 3,4,5-trichloropyridine as a carbon and nitrogen source. The condensation system was employed to reduce the volatilization of the solid source during the non-growth stage, which leads to a great improvement of quality of as-prepared NG films. Compared to the one synthesized using conventional CVD methods, the NG films synthesized using condensation-assisted CVD present extremely low defects with a ratio of from D- to G-peak intensity (ID/IG) in the Raman spectrum lower than 0.35. The corresponding total N content, graphitic nitrogen/total nitrogen ratio, and carrier mobility reach 3.2 at%, 67%, and 727 cm2V−1S−1, respectively. This improved condensation-assisted CVD method provides a facile and well-controlled approach for fabricating high-quality NG films, which would be very useful for building electronic devices with high electrical performance.

Low temperature critical growth of high quality nitrogen doped graphene on dielectrics by plasma-enhanced chemical vapor deposition.

Critical Crystal Growth of Graphene on Dielectric Substrates at Low Temperature for Electronic Devices.

Growth of Low-Defect Nitrogen-Doped Graphene Film Using Condensation-Assisted Chemical Vapor Deposition Method

Low-Temperature Nitrogen Doping of Nanocrystalline Graphene Films with Tunable Pyridinic-N and Pyrrolic-N by Cold-Wall Plasma-Assisted Chemical Vapor Deposition

Hydrogen-dominated metal-free growth of graphitic-nitrogen doped graphene with <i>n</i>-type transport behaviors

Nucleation and growth of graphene at different temperatures by plasma enhanced chemical vapor deposition

Atomic Resolution of Nitrogen-Doped Graphene on Cu Foils.

High-Quality N-Doped Graphene with Controllable Nitrogen Bonding Configurations Derived from Ionic Liquids.

Direct Synthesis of High-Quality Nitrogen-Doped Graphene Via Ion Implantation

Synthesis of Nitrogen-Doped Graphene by Chemical Vapour Deposition Using Melamine As the Sole Solid Source of Carbon and Nitrogen

Low-Temperature Growth of Large-Area Heteroatom-Doped Graphene Film

Epitaxial Growth of Uniform Single-Layer and Bilayer Graphene with Assistance of Nitrogen Plasma

Low Temperature Metal Free Growth of Graphene on Insulating Substrates by Plasma Assisted Chemical Vapor Deposition

The nucleation and growth of graphene under a controlled atmosphere during radio frequency-plasma-enhanced chemical vapor deposition

Low-temperature low-power PECVD synthesis of vertically aligned graphene

Direct CVD Growth of Graphene on Technologically Important Dielectric and Semiconducting Substrates

In Situnitrogen-Doped Graphene Grown from Polydimethylsiloxane by Plasma Enhanced Chemical Vapor Deposition

The Growth of Graphene on Ni–Cu Alloy Thin Films at a Low Temperature and Its Carbon Diffusion Mechanism

Influence of nitrogen on the growth of vertical graphene nanosheets under plasma

Effect of Ni film structure and surface morphology on the growth of graphene by PECVD

Air-stable N-Type Doping of Graphene from Overlying Si3N4 Film