Direct Growth of Nanographene at Low Temperature from Carbon Black for Highly Sensitive Temperature Detectors

Ke Li,Zhi Cai,Menglin Li,Donghua Liu,Min Cao,Dongyun Xia,Zhepeng Jin,Zhen Wang,Lan Dong,Xiangfan Xu,Dacheng Wei
DOI: https://doi.org/10.1088/0957-4484/27/50/505603
IF: 3.5
2016-01-01
Nanotechnology
Abstract:Graphene has attracted tremendous research interest owing to its widespread potential applications. However, these applications are partially hampered by the lack of a general method to produce high-quality graphene at low cost. Here, to the best of our knowledge, we use low-cost solid carbon allotropes as the precursor in plasma-enhanced chemical vapor deposition (PECVD) for the first time, and find that the hydrogen plasma and reaction temperature play a crucial role in the process. Hydrogen plasma etches carbon black, and produces graphene crystals in a high-temperature zone. Based on this finding, a modified PECVD technology is developed, which produces transparent conductive nanographene films directly on various substrates at a temperature as low as 600 °C. For application, the closely packed structure of the nanographene film enables a remarkable temperature-dependent behavior of the resistance with a ratio higher than that previously reported, indicating its great potential for usage in highly sensitive temperature detectors.
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