Transport properties and enhanced thermoelectric performance of aluminum doped Cu3SbSe4
yuanyue li,xiaoying qin,di li,xiyu li,yongfei liu,jian zhang,chunjun song,hongxing xin
DOI: https://doi.org/10.1039/c5ra02030a
IF: 4.036
2015-01-01
RSC Advances
Abstract:The electrical transport and thermoelectric properties of Cu3Sb1-xAlxSe4 (x = 0, 0.01, 0.02 and 0.03) compounds are investigated in the temperature range of 300-600 K. The results indicate that with increasing Al content from x = 0 to x = 0.03, hole concentration increases monotonically from 8.04 x 10(17) to 1.19 x 10(19) cm(-3) due to the substitution of Al3+ for Sb5+, thus leading to a large decrease in the electrical resistivity of Cu3Sb1-xAlxSe4. Meanwhile, the increase in hole concentration leads to a transition from a non-degenerate (x = 0) to a partial degenerate (x = 0.01, 0.02) and then to a degenerate state (x = 0.03). The power factor (PF) of all the Al-doped Cu3Sb1-xAlxSe4 samples is remarkably improved due to the optimization of hole concentration. Lattice thermal conductivity k(L) of the heavily doped sample (x = 0.03) is reduced. As a result, a large thermoelectric figure of merit ZT = 0.58 is obtained for Cu3Sb0.97Al0.03Se4 at 600 K, which is around 1.9 times as large as that of the un-doped Cu3SbSe4.