Nano-Machining of Silicon Phthalocyanine Dichloride Films on H-Passivated Si(111)

P Miao,AW Robinson,RE Palmer
DOI: https://doi.org/10.1088/0022-3727/31/9/001
1998-01-01
Abstract:Films of silicon phthalocyanine dichloride (SiPcCl2) deposited from solution onto a chemically prepared hydrogen-passivated Si(111) surface were manipulated with the scanning tunnelling microscope (STM) in air. We find that nanometre-scale square and trench patterns can be created in the SiPcCl2 film by the STM tip through repeated scans under normal imaging conditions (V-sample = +1.68 V, I = 0.35 nA) or by a single scan using a high tunnelling current (10 nA). Spectroscopic (I-V) measurements of the film show that the film is chemically unchanged by the machining process. The film cannot be machined after exposure to air for a period of days, suggesting that some form of hydrolysis of SiPcCl2 occurs.
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